Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

A. Fiore; M. Rossetti; B. Alloing; C. Paranthoën; J.X. Chen; L. Geelhaar; H. Riechert

doi:10.1103/PhysRevB.70.205311

Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

A. Fiore, M. Rossetti, B. Alloing, C. Paranthoën, J.X. Chen, L. Geelhaar, H. Riechert

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area

Originele taal-2	Engels
Artikelnummer	205311
Pagina's (van-tot)	205311-1/12
Tijdschrift	Physical Review B
Volume	70
Nummer van het tijdschrift	20
DOI's	https://doi.org/10.1103/PhysRevB.70.205311
Status	Gepubliceerd - 2004

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10.1103/PhysRevB.70.205311

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abstract = "We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area",

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AU - Fiore, A.

AU - Rossetti, M.

AU - Alloing, B.

AU - Paranthoën, C.

AU - Chen, J.X.

AU - Geelhaar, L.

AU - Riechert, H.

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AB - We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area

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Carrier diffusion in low-dimensional semiconductors. a comparison of quantum wells, disordered quantum wells, and quantum dots

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