Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong, P. Offermans, R. Nöetzel, P. M. Koenraad, J. H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)

Samenvatting

The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

Originele taal-2Engels
Titel2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's119-124
Aantal pagina's6
ISBN van geprinte versie078038668X, 9780780386686
DOI's
StatusGepubliceerd - 1 dec 2005
Evenement2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
Duur: 20 sep 200425 sep 2004

Congres

Congres2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
LandChina
StadBeijing
Periode20/09/0425/09/04

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