Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong; P. Offermans; R. Nöetzel; P. M. Koenraad; J. H. Wolter

doi:10.1109/SIM.2005.1511399

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

Q. Gong, P. Offermans, R. Nöetzel, P. M. Koenraad, J. H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

Originele taal-2	Engels
Titel	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	119-124
Aantal pagina's	6
ISBN van geprinte versie	078038668X, 9780780386686
DOI's	https://doi.org/10.1109/SIM.2005.1511399
Status	Gepubliceerd - 1 dec. 2005
Evenement	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China Duur: 20 sep. 2004 → 25 sep. 2004

Congres

Congres	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Land/Regio	China
Stad	Beijing
Periode	20/09/04 → 25/09/04

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Gong, Q., Offermans, P., Nöetzel, R., Koenraad, P. M., & Wolter, J. H. (2005). Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (blz. 119-124). Artikel 1511399 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SIM.2005.1511399

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title = "Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy",

abstract = "The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.",

author = "Q. Gong and P. Offermans and R. N{\"o}etzel and Koenraad, {P. M.} and Wolter, {J. H.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/SIM.2005.1511399",

language = "English",

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booktitle = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 ; Conference date: 20-09-2004 Through 25-09-2004",

}

Gong, Q, Offermans, P, Nöetzel, R, Koenraad, PM & Wolter, JH 2005, Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. in 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004., 1511399, Institute of Electrical and Electronics Engineers, Piscataway, blz. 119-124, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, China, 20/09/04. https://doi.org/10.1109/SIM.2005.1511399

Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy. / Gong, Q.; Offermans, P.; Nöetzel, R. et al.
2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004. Piscataway: Institute of Electrical and Electronics Engineers, 2005. blz. 119-124 1511399.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

AU - Gong, Q.

AU - Offermans, P.

AU - Nöetzel, R.

AU - Koenraad, P. M.

AU - Wolter, J. H.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

AB - The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied by cross-sectional scanning tunneling microscopy. GaAs capping at 500°C causes leveling of the QDs which is completely suppressed by decreasing the growth temperature to 300°C. At elevated temperature the QD leveling is driven in the initial stage of the GaAs capping process while it is quenched during continued overgrowth when the QDs become buried. For common GaAs growth rates, both phenomena take place on a similar time scale. Therefore, the size and shape of buried InAs QDs are determined by a delicate interplay between driving and quenching of the QD leveling during capping which is controlled by the GaAs growth rate and growth temperature.

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M3 - Conference contribution

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BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

PB - Institute of Electrical and Electronics Engineers

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Y2 - 20 September 2004 through 25 September 2004

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Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy

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