Capacitance-voltage characteristics of organic thin-film transistors

G. H. Gelinck, Erik Van Veenendaal, H. Van Der Vegte, R. Coehoorn

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

3 Citaten (Scopus)

Samenvatting

We have fabricated pentacene-based thin film field-effect transistors and analyzed quasi-static current and capacitance measurements as a function of gate bias. The latter provides an independent and accurate estimation of the threshold voltage, an important device parameter that cannot be extracted unambiguously from the I-V measurements. The C-V characteristics of the transistors were furthermore characterized using impedance spectroscopy as a function of frequency and gate bias for the zero drain bias case. We model the impedance data with a simple transmission line equivalent circuit and find that the frequency dependence of the capacitance and phase can be described adequately from the channel conductance, as determined from quasi static current-voltage measurements, and the geometrical values of the channel and source/drain to gate electrode overlap capacitances.

Originele taal-2Engels
TitelOrganic Field-Effect Transistors VI
UitgeverijSPIE
Aantal pagina's9
ISBN van geprinte versie9780819468062
DOI's
StatusGepubliceerd - 1 dec 2007
Extern gepubliceerdJa
EvenementOrganic Field-Effect Transistors VI - San Diego, CA, Verenigde Staten van Amerika
Duur: 26 aug 200728 aug 2007

Publicatie series

NaamProceedings of SPIE
Volume6658

Congres

CongresOrganic Field-Effect Transistors VI
LandVerenigde Staten van Amerika
StadSan Diego, CA
Periode26/08/0728/08/07

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  • Citeer dit

    Gelinck, G. H., Van Veenendaal, E., Van Der Vegte, H., & Coehoorn, R. (2007). Capacitance-voltage characteristics of organic thin-film transistors. In Organic Field-Effect Transistors VI [665802] (Proceedings of SPIE; Vol. 6658). SPIE. https://doi.org/10.1117/12.737252