Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

Y. Barbarin, E.A.J.M. Bente, T. Vries, de, J.H. Besten, den, P.J. Veldhoven, van, M.J.H. Sander - Jochem, E. Smalbrugge, F.W.M. Otten, van, E.J. Geluk, M.J.R. Heck, X.J.M. Leijtens, J.J.G.M. Tol, van der, F. Karouta, Y.S. Oei, R. Nötzel, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

4 Downloads (Pure)

Uittreksel

In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.
Originele taal-2Engels
TitelProceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium
RedacteurenP. Mégret, M. Wuilpart, S. Bette, N. Staquet
Plaats van productieMons
UitgeverijIEEE/LEOS
Pagina's89-93
ISBN van geprinte versie2-9600226-4-5
StatusGepubliceerd - 2005
Evenement10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium - Mons, België
Duur: 1 dec 20052 dec 2005

Congres

Congres10th Annual Symposium of the IEEE/LEOS Benelux Chapter, December 1-2, 2005, Mons, Belgium
LandBelgië
StadMons
Periode1/12/052/12/05
Ander10th Annual Symposium IEEE/LEOS Benelux Chapter, Mons, Belgium

Vingerafdruk

butt joints
waveguides
reflectance
masks
epitaxy
cavities
optimization
metals
lasers

Citeer dit

Barbarin, Y., Bente, E. A. J. M., Vries, de, T., Besten, den, J. H., Veldhoven, van, P. J., Sander - Jochem, M. J. H., ... Smit, M. K. (2005). Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In P. Mégret, M. Wuilpart, S. Bette, & N. Staquet (editors), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium (blz. 89-93). Mons: IEEE/LEOS.
Barbarin, Y. ; Bente, E.A.J.M. ; Vries, de, T. ; Besten, den, J.H. ; Veldhoven, van, P.J. ; Sander - Jochem, M.J.H. ; Smalbrugge, E. ; Otten, van, F.W.M. ; Geluk, E.J. ; Heck, M.J.R. ; Leijtens, X.J.M. ; Tol, van der, J.J.G.M. ; Karouta, F. ; Oei, Y.S. ; Nötzel, R. ; Smit, M.K. / Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. redacteur / P. Mégret ; M. Wuilpart ; S. Bette ; N. Staquet. Mons : IEEE/LEOS, 2005. blz. 89-93
@inproceedings{e7d369f4d7e14eea9cabc442e2329909,
title = "Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss",
abstract = "In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-P{\'e}rot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.",
author = "Y. Barbarin and E.A.J.M. Bente and {Vries, de}, T. and {Besten, den}, J.H. and {Veldhoven, van}, P.J. and {Sander - Jochem}, M.J.H. and E. Smalbrugge and {Otten, van}, F.W.M. and E.J. Geluk and M.J.R. Heck and X.J.M. Leijtens and {Tol, van der}, J.J.G.M. and F. Karouta and Y.S. Oei and R. N{\"o}tzel and M.K. Smit",
year = "2005",
language = "English",
isbn = "2-9600226-4-5",
pages = "89--93",
editor = "P. M{\'e}gret and M. Wuilpart and S. Bette and N. Staquet",
booktitle = "Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium",
publisher = "IEEE/LEOS",

}

Barbarin, Y, Bente, EAJM, Vries, de, T, Besten, den, JH, Veldhoven, van, PJ, Sander - Jochem, MJH, Smalbrugge, E, Otten, van, FWM, Geluk, EJ, Heck, MJR, Leijtens, XJM, Tol, van der, JJGM, Karouta, F, Oei, YS, Nötzel, R & Smit, MK 2005, Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. in P Mégret, M Wuilpart, S Bette & N Staquet (redactie), Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. IEEE/LEOS, Mons, blz. 89-93, Mons, België, 1/12/05.

Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. / Barbarin, Y.; Bente, E.A.J.M.; Vries, de, T.; Besten, den, J.H.; Veldhoven, van, P.J.; Sander - Jochem, M.J.H.; Smalbrugge, E.; Otten, van, F.W.M.; Geluk, E.J.; Heck, M.J.R.; Leijtens, X.J.M.; Tol, van der, J.J.G.M.; Karouta, F.; Oei, Y.S.; Nötzel, R.; Smit, M.K.

Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. redactie / P. Mégret; M. Wuilpart; S. Bette; N. Staquet. Mons : IEEE/LEOS, 2005. blz. 89-93.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss

AU - Barbarin, Y.

AU - Bente, E.A.J.M.

AU - Vries, de, T.

AU - Besten, den, J.H.

AU - Veldhoven, van, P.J.

AU - Sander - Jochem, M.J.H.

AU - Smalbrugge, E.

AU - Otten, van, F.W.M.

AU - Geluk, E.J.

AU - Heck, M.J.R.

AU - Leijtens, X.J.M.

AU - Tol, van der, J.J.G.M.

AU - Karouta, F.

AU - Oei, Y.S.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2005

Y1 - 2005

N2 - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

AB - In this paper we report on the observation of reflection values <-50dB at activepassive butt-joint interfaces in extended cavity Fabry-Pérot lasers and 0.19dB loss at passive-passive butt-joint interfaces. A three step growth process has been developed using MOVPE with all metal-organic precursors. In the first epitaxy step, the active layer stack is grown up to 200 nm above the index guiding layer. The passive regions are etched using a SiNx mask, afterwards those regions are re-grown up to the top of the active regions. Finally the SiNx mask is removed and the top cladding is grown. We have investigated the minimization of the butt-joint reflection by crossing the interface at different angles. Measurements showed that the butt-joint reflection is below -50dB for angles above 12 degrees.

M3 - Conference contribution

SN - 2-9600226-4-5

SP - 89

EP - 93

BT - Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium

A2 - Mégret, P.

A2 - Wuilpart, M.

A2 - Bette, S.

A2 - Staquet, N.

PB - IEEE/LEOS

CY - Mons

ER -

Barbarin Y, Bente EAJM, Vries, de T, Besten, den JH, Veldhoven, van PJ, Sander - Jochem MJH et al. Butt-joint interfaces in InP/InGaAsP waveguides with very low reflectivity and low loss. In Mégret P, Wuilpart M, Bette S, Staquet N, redacteurs, Proceedings of the 10th Annual Symposium IEEE/LEOS Benelux Chapter, 1-2 December 2005, Mons, Belgium. Mons: IEEE/LEOS. 2005. blz. 89-93