Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

H. Wang, J. Yuan, S. Anantathanasarn, P.J. Veldhoven, van, T. Vries, de, E. Smalbrugge, E.J. Geluk, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, R. Nötzel

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Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

Originele taal-2Engels
TitelECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers
RedacteurenX.J.M. Leijtens
Plaats van productieEindhoven, Netherlands
UitgeverijTechnische Universiteit Eindhoven
Pagina's55-58
Aantal pagina's4
ISBN van geprinte versie978-90-386-1317-8
StatusGepubliceerd - 2008
Evenement14th European Conference on Integrated Optics (ECIO 2008) - Eindhoven, Nederland
Duur: 11 jun 200813 jun 2008
Congresnummer: 14

Congres

Congres14th European Conference on Integrated Optics (ECIO 2008)
Verkorte titelECIO 2008
LandNederland
StadEindhoven
Periode11/06/0813/06/08
Ander14th European Conference on Integrated Optics and technical exhibition, ECIO '08, Eindhoven, The Netherlands

Vingerafdruk

Semiconductor quantum dots
Quantum dot lasers
Lasers
Electron transitions
Quantum efficiency
Excited states
Transparency
Ground state
Waveguides
Current density
Temperature

Citeer dit

Wang, H., Yuan, J., Anantathanasarn, S., Veldhoven, van, P. J., Vries, de, T., Smalbrugge, E., ... Nötzel, R. (2008). Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. In X. J. M. Leijtens (editor), ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers (blz. 55-58). [WeC3] Eindhoven, Netherlands: Technische Universiteit Eindhoven.
Wang, H. ; Yuan, J. ; Anantathanasarn, S. ; Veldhoven, van, P.J. ; Vries, de, T. ; Smalbrugge, E. ; Geluk, E.J. ; Bente, E.A.J.M. ; Oei, Y.S. ; Smit, M.K. ; Nötzel, R. / Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. redacteur / X.J.M. Leijtens. Eindhoven, Netherlands : Technische Universiteit Eindhoven, 2008. blz. 55-58
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title = "Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm",
abstract = "Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-P{\'e}rot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.",
author = "H. Wang and J. Yuan and S. Anantathanasarn and {Veldhoven, van}, P.J. and {Vries, de}, T. and E. Smalbrugge and E.J. Geluk and E.A.J.M. Bente and Y.S. Oei and M.K. Smit and R. N{\"o}tzel",
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language = "English",
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pages = "55--58",
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Wang, H, Yuan, J, Anantathanasarn, S, Veldhoven, van, PJ, Vries, de, T, Smalbrugge, E, Geluk, EJ, Bente, EAJM, Oei, YS, Smit, MK & Nötzel, R 2008, Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. in XJM Leijtens (redactie), ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers., WeC3, Technische Universiteit Eindhoven, Eindhoven, Netherlands, blz. 55-58, Eindhoven, Nederland, 11/06/08.

Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. / Wang, H.; Yuan, J.; Anantathanasarn, S.; Veldhoven, van, P.J.; Vries, de, T.; Smalbrugge, E.; Geluk, E.J.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Nötzel, R.

ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. redactie / X.J.M. Leijtens. Eindhoven, Netherlands : Technische Universiteit Eindhoven, 2008. blz. 55-58 WeC3.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm

AU - Wang, H.

AU - Yuan, J.

AU - Anantathanasarn, S.

AU - Veldhoven, van, P.J.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Geluk, E.J.

AU - Bente, E.A.J.M.

AU - Oei, Y.S.

AU - Smit, M.K.

AU - Nötzel, R.

PY - 2008

Y1 - 2008

N2 - Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

AB - Butt-joint integrated-extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 μn are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below - 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current.

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M3 - Conference contribution

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BT - ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers

A2 - Leijtens, X.J.M.

PB - Technische Universiteit Eindhoven

CY - Eindhoven, Netherlands

ER -

Wang H, Yuan J, Anantathanasarn S, Veldhoven, van PJ, Vries, de T, Smalbrugge E et al. Butt-joint integrated InAs/InP quantum dot Fabry-Perot laser devices emitting at 1.5 μm. In Leijtens XJM, redacteur, ECIO'08 Eindhoven - Proceedings of the 14th European Conference on Integrated Optics and Technical Exhibition, Contributed and Invited Papers. Eindhoven, Netherlands: Technische Universiteit Eindhoven. 2008. blz. 55-58. WeC3