Bispectrum of the 1/F noise in diodes on quantum dots and wells

A.V. Yakimov, A.V. Belyakov, M.Y. Perov, L.K.J. Vandamme

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

5 Citaten (Scopus)

Samenvatting

The bispectrum of the 1/f noise is investigated in the present work. For the Gaussian noise it equals zero. LEDs on self-organized InAs/GaAs quantum dots and laser diodes on In0.2Ga0.8As/GaAs/InGaP quantum wells made in Russia were tested. The voltage noise was analyzed in a wide interval of currents through the diodes. Estimates of the probability density function and semi-invariants of the noise have not revealed any appreciable deviations from the Gauss law. Noise spectra Sv(f)in the range 1 Hz - 20 kHz were analyzed. In most cases the frequency exponent γs of the spectrum is close to one, the Hooge’s parameter αH has magnitude of the order 10-4. The bispectrum Bv(f1,f2of the noise is a complex function of frequencies f1 and f2. Its absolute value is decreasing while moving from the beginning of the frequency plane Of1f2. The decrease along the bisector (f1 = f2 = f) follows the power law characterized by the frequency exponent γB ≈ 1.5 γs. The dependence of the "height" of |Bv(f,f)| on the current through the diode is qualitatively similar to this one for the spectrum. The power law describes these dependences, however the exponents are essentially different.
Originele taal-2Engels
TitelSPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States
Plaats van productieBellingham
UitgeverijSPIE
Pagina's40-48
DOI's
StatusGepubliceerd - 2003

Publicatie series

NaamProceedings of SPIE
Volume5115

Vingerafdruk

Duik in de onderzoeksthema's van 'Bispectrum of the 1/F noise in diodes on quantum dots and wells'. Samen vormen ze een unieke vingerafdruk.

Citeer dit