BiCMOS high-performance ICs : from DC to mm-wave

A.B. Smolders; H. Gul; E. Heijden, van der; P. Gamand; M. Geurts

doi:10.1109/BIPOL.2009.5314130

BiCMOS high-performance ICs : from DC to mm-wave

A.B. Smolders
, H. Gul
, E. Heijden, van der
, P. Gamand
, M. Geurts

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

8 Citaten (Scopus)

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Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

Originele taal-2	Engels
Titel	Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	115-122
ISBN van geprinte versie	978-1-4244-4894-4
DOI's	https://doi.org/10.1109/BIPOL.2009.5314130
Status	Gepubliceerd - 2009

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10.1109/BIPOL.2009.5314130

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title = "BiCMOS high-performance ICs : from DC to mm-wave",

abstract = "Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.",

author = "A.B. Smolders and H. Gul and \{Heijden, van der\}, E. and P. Gamand and M. Geurts",

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doi = "10.1109/BIPOL.2009.5314130",

language = "English",

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BiCMOS high-performance ICs : from DC to mm-wave. / Smolders, A.B.; Gul, H.; Heijden, van der, E. et al.
Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy. Piscataway: Institute of Electrical and Electronics Engineers, 2009. blz. 115-122.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - BiCMOS high-performance ICs : from DC to mm-wave

AU - Smolders, A.B.

AU - Gul, H.

AU - Heijden, van der, E.

AU - Gamand, P.

AU - Geurts, M.

PY - 2009

Y1 - 2009

N2 - Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

AB - Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

U2 - 10.1109/BIPOL.2009.5314130

DO - 10.1109/BIPOL.2009.5314130

M3 - Conference contribution

SN - 978-1-4244-4894-4

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BT - Proceedings of the IEEE Bipolar/BiCMOS Circuits and technology Meeting, BCTM 2009, 12-14 October 2009, Capri, Italy

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

BiCMOS high-performance ICs : from DC to mm-wave

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