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In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

Originele taal-2Engels
Artikelnummer3802010
Aantal pagina's10
TijdschriftIEEE Journal of Selected Topics in Quantum Electronics
Volume28
Nummer van het tijdschrift2
Vroegere onlinedatum8 sep 2021
DOI's
StatusE-publicatie vóór gedrukte publicatie - 8 sep 2021

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