Beyond 110 GHz uni-traveling carrier photodiodes on an InP-membrane-on-silicon platform

Jasper de Graaf (Corresponding author), Xinran Zhao (Corresponding author), Dimitrios Konstantinou, Menno van den Hout, Sander Reniers, Longfei Shen, Sjoerd van der Heide, Simon Rommel, Idelfonso Tafur Monroy, Chigo M. Okonkwo, Zizheng Cao, Ton Koonen, Kevin Williams, Yuqing Jiao

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

6 Citaten (Scopus)
412 Downloads (Pure)


In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 ×2;μm2 are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Ω and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

Originele taal-2Engels
Aantal pagina's10
TijdschriftIEEE Journal of Selected Topics in Quantum Electronics
Nummer van het tijdschrift2
StatusGepubliceerd - 1 mrt. 2022


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