BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers

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Samenvatting

In this publication the challenges of bonding InP and BiCMOS wafers with high topology are described. A possible process is discussed. Planarization with thick BCB is motivated and the challenges of wafer alignment are explained.
Originele taal-2Engels
TitelProceedings Symposium IEEE Photonics Society Benelux, 2018, Brussels, Belgium
Pagina's160-163
Aantal pagina's4
StatusGepubliceerd - nov 2018
EvenementIEEE Photonics Benelux Chapter Annual Symposium 2018 - Paleis der Academiën, Brussels, België
Duur: 15 nov 201816 nov 2018

Congres

CongresIEEE Photonics Benelux Chapter Annual Symposium 2018
LandBelgië
StadBrussels
Periode15/11/1816/11/18

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Citeer dit

Spiegelberg, M., van Engelen, J., de Vries, T., Williams, K., & van der Tol, J. (2018). BCB bonding of high topology 3 inch InP and BiCMOS wafers for integrated optical transceivers. In Proceedings Symposium IEEE Photonics Society Benelux, 2018, Brussels, Belgium (blz. 160-163)