Balancing hole and electron conduction in ambipolar split-gate thin-film Transistors

H. Yoo, M. Ghittorelli, D.-K. Lee, E.C.P. Smits, G.H. Gelinck, H. Ahn, H.-K. Lee, F. Torricelli, J.-J. Kim

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11 Citaten (Scopus)
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Samenvatting

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Originele taal-2Engels
Artikelnummer5015
Aantal pagina's13
TijdschriftScientific Reports
Volume7
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 1 dec 2017

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