Author Correction:: Classification with a disordered dopant atom network in silicon

Tao Chen; Jeroen van Gelder; Bram van de Ven; Sergey V. Amitonov; Bram de Wilde; Hans Christian Ruiz Euler; Hajo Broersma; Peter A. Bobbert; Floris A. Zwanenburg; Wilfred G. van der Wiel

doi:10.1038/s41586-025-08803-8

Author Correction: Classification with a disordered dopant atom network in silicon

Tao Chen, Jeroen van Gelder, Bram van de Ven, Sergey V. Amitonov, Bram de Wilde, Hans Christian Ruiz Euler, Hajo Broersma, Peter A. Bobbert, Floris A. Zwanenburg, Wilfred G. van der Wiel (Corresponding author)

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Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020

In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

Originele taal-2	Engels
Pagina's (van-tot)	E22
Aantal pagina's	1
Tijdschrift	Nature
Volume	639
Nummer van het tijdschrift	8056
DOI's	https://doi.org/10.1038/s41586-025-08803-8
Status	Gepubliceerd - 11 mrt. 2025

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© The Author(s), under exclusive licence to Springer Nature Limited 2025.

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Classification with a disordered dopant-atom network in silicon
Chen, T., van Gelder, J., van de Ven, B., Amitonov, S. V., de Wilde, B., Ruiz Euler, H. C., Broersma, H., Bobbert, P. A., Zwanenburg, F. A. & van der Wiel, W. G. (Corresponding author), 16 jan. 2020, In: Nature. 577, 7790, blz. 341-345 5 blz.
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abstract = "Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.",

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AU - Chen, Tao

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AU - Amitonov, Sergey V.

AU - de Wilde, Bram

AU - Ruiz Euler, Hans Christian

AU - Broersma, Hajo

AU - Bobbert, Peter A.

AU - Zwanenburg, Floris A.

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N2 - Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

AB - Correction to: Nature https://doi.org/10.1038/s41586-019-1901-0 Published online 15 January 2020In the version of the article initially published, erroneously, a 10-based logarithm instead of a natural logarithm had been applied in the derivation of the activation energy in the band conduction regime (250–295 K). The correctly derived activation energy gives a value of 310 meV instead of 130 meV, which makes the proposed increased ionization energy due to dopant deactivation less likely. This correction does not affect any of the experimental results nor the conclusions of the paper.

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Author Correction: Classification with a disordered dopant atom network in silicon

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Classification with a disordered dopant-atom network in silicon

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