Atomic-scale analysis of self-assembled quantum dots by cross-sectionalscanning, tunneling microscopy, and atom probe tomography

J.G. Keizer, P.M. Koenraad

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureHoofdstukAcademicpeer review

2 Citaten (Scopus)

Samenvatting

Self-assembled quantum dots (QDs) have been at the center of research on the quantum properties of zero-dimensional semiconductor nanostructures. The deep understanding of the physical properties and mechanisms that are active in QDs have allowed for their application in quantum secure single photon communication, quantum processing, etc. This would have been impossible without the progress in the growth control of self-assembled QDs. Nowadays, we can accurately control QD parameters such as height, composition, and strain which determine the optoelectronic and spintronic properties. Several double capping approaches have been developed that allow trimming of the QD height and Sb capping was shown to eliminate QD erosion during capping. Droplet epitaxy is a novel approach to obtain non-strained QDs, which is of great advantage because strain is one of the most complicating factors in understanding and utilizing self-assembled QDs.In this chapter we will review our recent cross-sectional scanning tunneling microscopy (X-STM) analysis of self-assembled QDs in various hosts and obtained by a range of techniques to control their structural properties. The X-STM technique allows to image atomic scale details in semiconductor structures that are cleaved along a natural cleavage plane perpendicular to the growth direction. Although we have been able to analyze many intricate aspects of the studied QDs by X-STM, this technique is limited by its twodimensional (2D) nature. Recently, atom probe tomography (APT) has been able to extend its field of application to semiconductor materials.

Originele taal-2Engels
TitelQuantum Dots
SubtitelOptics, Electron Transport and Future Applications
RedacteurenAlexander Tartakovskii
UitgeverijCambridge University Press
Pagina's41-60
Aantal pagina's20
ISBN van elektronische versie9780511998331
ISBN van geprinte versie9781107012585
DOI's
StatusGepubliceerd - 1 jan 2012

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