Atomic layer deposition of insulating alf3/polyimide nanolaminate films

Xinzhi Li (Corresponding author), Marko Vehkamäki, Mikko Heikkilä, Miika Mattinen, Matti Putkonen, Markku Leskelä, Mikko Ritala (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review


This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracar-boxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scanning electron micros-copy (FESEM) and X-ray reflection (XRR) analysis, it was found that the topmost layer (nominally 10 nm in thickness) of the nanolaminate film (100 nm total thickness) changed when exposed to the atmosphere. After all, the effect on roughness was minimal. The length of a delay time between the AlF3 and polyimide depositions was found to affect the sharpness of the nanolaminate structure. Electrical properties of AlF3/polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to poly-imide films, respectively.

Originele taal-2Engels
Aantal pagina's13
Nummer van het tijdschrift3
StatusGepubliceerd - mrt 2021

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© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Copyright 2021 Elsevier B.V., All rights reserved.

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