Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density

Vincent Vandalon; Marcel A. Verheijen; W.M.M. Kessels; Ageeth A. Bol

doi:10.1021/acsanm.0c02167

Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density

Vincent Vandalon (Corresponding author)
, Marcel A. Verheijen
, W.M.M. Kessels
, Ageeth A. Bol (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

37 Citaten (Scopus)

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Extrinsically doped 2D semiconductors are essential for the fabrication of high-performance nanoelectronics amongst many other applications. Here we present a facile synthesis method for Al doped MoS2 via plasmaenhanced atomic-layer deposition (ALD) resulting in particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD based approach also affords excellent control over the doping profile as demonstrated in a combined transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) study. Sharp transitions in the Al concentration were realized and both doped and undoped material had the
characteristic 2D layered nature. The fine control over the doping concentration, combined with the conformallity and uniformity and sub-nm thickness control inherent to ALD should ensure compatibility with large scale fabrication. This makes Al:MoS2 ALD of interest for nanoelectronics but also for photovoltaics and TMD based catalysts.

Originele taal-2	Engels
Pagina's (van-tot)	10200-10208
Aantal pagina's	9
Tijdschrift	ACS Applied Nano Materials
Volume	3
Nummer van het tijdschrift	10
DOI's	https://doi.org/10.1021/acsanm.0c02167
Status	Gepubliceerd - 23 okt. 2020

Financiering

This work was partially funded by The Netherlands Organization for Scientific Research (NWO) through the Gravitation program “Research Centre for Integrated Nanophotonics”. This work was also supported by the European Research Council (grant agreement no. 648787-ALD of 2DTMDs). The authors gratefully acknowledge C. A. A. van Helvoirt, J. J. L. M. Meulendijks, C. O. van Bommel, and J. J. A. Zeebregts for their technical assistance. Dr. B. Barcones is acknowledged for FIB preparation of the TEM sample. Solliance and the Dutch province of Noord-Brabant are acknowledged for funding the TEM facility. This work was partially funded by The Netherlands Organization for Scientific Research (NWO) through the Gravitation program ?Research Centre for Integrated Nanophotonics?. This work was also supported by the European Research Council (grant agreement no. 648787-ALD of 2DTMDs). The authors gratefully acknowledge C. A. A. van Helvoirt, J. J. L. M. Meulendijks, C. O. van Bommel, and J. J. A. Zeebregts for their technical assistance. Dr. B. Barcones is acknowledged for FIB preparation of the TEM sample. Solliance and the Dutch province of Noord-Brabant are acknowledged for funding the TEM facility.

Financiers	Financiernummer
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
European Union’s Horizon Europe research and innovation programme	648787
European Union’s Horizon Europe research and innovation programme
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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10.1021/acsanm.0c02167Licentie: CC BY-NC-ND

publishers versionDefinitieve gepubliceerde versie, 2,1 MBLicentie: CC BY-NC-ND

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title = "Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density",

abstract = "Extrinsically doped 2D semiconductors are essential for the fabrication of high-performance nanoelectronics amongst many other applications. Here we present a facile synthesis method for Al doped MoS2 via plasmaenhanced atomic-layer deposition (ALD) resulting in particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD based approach also affords excellent control over the doping profile as demonstrated in a combined transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) study. Sharp transitions in the Al concentration were realized and both doped and undoped material had the characteristic 2D layered nature. The fine control over the doping concentration, combined with the conformallity and uniformity and sub-nm thickness control inherent to ALD should ensure compatibility with large scale fabrication. This makes Al:MoS2 ALD of interest for nanoelectronics but also for photovoltaics and TMD based catalysts.",

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Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density. / Vandalon, Vincent (Corresponding author); Verheijen, Marcel A.; Kessels, W.M.M. et al.
In: ACS Applied Nano Materials, Vol. 3, Nr. 10, 23.10.2020, blz. 10200-10208.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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AU - Bol, Ageeth A.

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N2 - Extrinsically doped 2D semiconductors are essential for the fabrication of high-performance nanoelectronics amongst many other applications. Here we present a facile synthesis method for Al doped MoS2 via plasmaenhanced atomic-layer deposition (ALD) resulting in particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD based approach also affords excellent control over the doping profile as demonstrated in a combined transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) study. Sharp transitions in the Al concentration were realized and both doped and undoped material had the characteristic 2D layered nature. The fine control over the doping concentration, combined with the conformallity and uniformity and sub-nm thickness control inherent to ALD should ensure compatibility with large scale fabrication. This makes Al:MoS2 ALD of interest for nanoelectronics but also for photovoltaics and TMD based catalysts.

AB - Extrinsically doped 2D semiconductors are essential for the fabrication of high-performance nanoelectronics amongst many other applications. Here we present a facile synthesis method for Al doped MoS2 via plasmaenhanced atomic-layer deposition (ALD) resulting in particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD based approach also affords excellent control over the doping profile as demonstrated in a combined transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDX) study. Sharp transitions in the Al concentration were realized and both doped and undoped material had the characteristic 2D layered nature. The fine control over the doping concentration, combined with the conformallity and uniformity and sub-nm thickness control inherent to ALD should ensure compatibility with large scale fabrication. This makes Al:MoS2 ALD of interest for nanoelectronics but also for photovoltaics and TMD based catalysts.

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Atomic Layer Deposition of Al doped MoS2: Synthesizing a p-type 2D semiconductor with tunable carrier density

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