Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3

W.M.M. Kessels, G. Dingemans, B. Hoex, L.R.J.G. van den Elzen, M.C.M. Sanden, van de

Onderzoeksoutput: Bijdrage aan congresOther

Samenvatting

No abstract.
Originele taal-2Engels
Aantal pagina's18
StatusGepubliceerd - 2009
Evenementconference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27 -
Duur: 27 aug 200927 aug 2009

Congres

Congresconference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27
Periode27/08/0927/08/09
AnderWorkshop on Silicon Dry Processing for Nanoelectronics and Micromechanics

    Vingerafdruk

Citeer dit

Kessels, W. M. M., Dingemans, G., Hoex, B., van den Elzen, L. R. J. G., & Sanden, van de, M. C. M. (2009). Atomic layer deposition (ALD) for crystalline Si photovoltaics: surface passivation by Al2O3. conference; Workshop on Silicon Dry Processing for Nanoelectronics and Micromechanics; 2009-08-27; 2009-08-27, .