Atomic-layer deposited passivation schemes for c-Si solar cells

Bas W.H. van de Loo; Bart Macco; Jimmy Melskens; Marcel A. Verheijen; W.M.M.Erwin Kessels

doi:10.1109/PVSC.2017.8366874

Atomic-layer deposited passivation schemes for c-Si solar cells

Bas W.H. van de Loo
, Bart Macco
, Jimmy Melskens
, Marcel A. Verheijen
, W.M.M.Erwin Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

1 Citaat (Scopus)

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A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al₂O₃, various other novel passivation schemes have recently been developed, such as Ga₂O₃, Ta₂O₅, SiO₂/Al₂O₃, HfO₂/Al₂O₃ and TiO₂, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Originele taal-2	Engels
Titel	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	1-6
Aantal pagina's	6
ISBN van elektronische versie	978-1-5090-5605-7
ISBN van geprinte versie	978-1-5090-5606-4
DOI's	https://doi.org/10.1109/PVSC.2017.8366874
Status	Gepubliceerd - 25 mei 2018
Evenement	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, Verenigde Staten van Amerika Duur: 25 jun. 2017 → 30 jun. 2017 Congresnummer: 44

Congres

Congres	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Verkorte titel	PVSC 2017
Land/Regio	Verenigde Staten van Amerika
Stad	Washington
Periode	25/06/17 → 30/06/17

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@inproceedings{394e6d56130344039827ddbc03b5b490,

title = "Atomic-layer deposited passivation schemes for c-Si solar cells",

abstract = "A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.",

keywords = "Charge carrier lifetime, Contacts, Crystalline silicon, Photovoltaic cells, Surface passivation",

author = "\{van de Loo\}, \{Bas W.H.\} and Bart Macco and Jimmy Melskens and Verheijen, \{Marcel A.\} and W.M.M.Erwin Kessels",

year = "2018",

month = may,

day = "25",

doi = "10.1109/PVSC.2017.8366874",

language = "English",

isbn = "978-1-5090-5606-4",

pages = "1--6",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

}

van de Loo, BWH, Macco, B, Melskens, J, Verheijen, MA & Kessels, WMME 2018, Atomic-layer deposited passivation schemes for c-Si solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers, Piscataway, blz. 1-6, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, District of Columbia, Verenigde Staten van Amerika, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366874

Atomic-layer deposited passivation schemes for c-Si solar cells. / van de Loo, Bas W.H.; Macco, Bart; Melskens, Jimmy et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Piscataway: Institute of Electrical and Electronics Engineers, 2018. blz. 1-6.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Atomic-layer deposited passivation schemes for c-Si solar cells

AU - van de Loo, Bas W.H.

AU - Macco, Bart

AU - Melskens, Jimmy

AU - Verheijen, Marcel A.

AU - Kessels, W.M.M.Erwin

N1 - Conference code: 44

PY - 2018/5/25

Y1 - 2018/5/25

N2 - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

AB - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

KW - Charge carrier lifetime

KW - Contacts

KW - Crystalline silicon

KW - Photovoltaic cells

KW - Surface passivation

UR - https://www.scopus.com/pages/publications/85048507255

U2 - 10.1109/PVSC.2017.8366874

DO - 10.1109/PVSC.2017.8366874

M3 - Conference contribution

AN - SCOPUS:85048507255

SN - 978-1-5090-5606-4

SP - 1

EP - 6

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Atomic-layer deposited passivation schemes for c-Si solar cells

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