Atomic-layer deposited passivation schemes for c-Si solar cells

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Originele taal-2Engels
Titel2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1-6
Aantal pagina's6
ISBN van elektronische versie978-1-5090-5605-7
ISBN van geprinte versie978-1-5090-5606-4
DOI's
StatusGepubliceerd - 25 mei 2018
Evenement44th IEEE Photovoltaic Specialist Conference (PVSC 2017) - Washington, Verenigde Staten van Amerika
Duur: 25 jun 201730 jun 2017
Congresnummer: 44

Congres

Congres44th IEEE Photovoltaic Specialist Conference (PVSC 2017)
Verkorte titelPVSC 2017
LandVerenigde Staten van Amerika
StadWashington
Periode25/06/1730/06/17

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  • Citeer dit

    van de Loo, B. W. H., Macco, B., Melskens, J., Verheijen, M. A., & Kessels, W. M. M. E. (2018). Atomic-layer deposited passivation schemes for c-Si solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (blz. 1-6). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2017.8366874