Atomic-layer deposited passivation schemes for c-Si solar cells

Bas W.H. van de Loo, Bart Macco, Jimmy Melskens, Marcel A. Verheijen, W.M.M.Erwin Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)


A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Originele taal-2Engels
Titel2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's6
ISBN van elektronische versie978-1-5090-5605-7
ISBN van geprinte versie978-1-5090-5606-4
StatusGepubliceerd - 25 mei 2018
Evenement44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, Verenigde Staten van Amerika
Duur: 25 jun. 201730 jun. 2017
Congresnummer: 44


Congres44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Verkorte titelPVSC 2017
Land/RegioVerenigde Staten van Amerika


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