Atomic-layer deposited passivation schemes for c-Si solar cells

B.W.H. van de Loo; B. Macco; J. Melskens; M.A. Verheijen; W.M.M.E. Kessels

doi:10.1109/PVSC.2016.7750356

Atomic-layer deposited passivation schemes for c-Si solar cells

B.W.H. van de Loo, B. Macco, J. Melskens, M.A. Verheijen, W.M.M.E. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al₂O₃, various other novel passivation schemes have recently been developed, such as Ga₂O₃, Ta₂O₅, SiO₂/Al₂O₃, HfO₂/Al₂O₃ and TiO₂, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

Originele taal-2	Engels
Titel	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	3655-3660
Aantal pagina's	6
Volume	2016-November
ISBN van elektronische versie	9781509027248
DOI's	https://doi.org/10.1109/PVSC.2016.7750356
Status	Gepubliceerd - 18 nov. 2016
Evenement	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Oregon Convention Center, Portland, Verenigde Staten van Amerika Duur: 5 jun. 2016 → 10 jun. 2016 Congresnummer: 43 https://www.ieee-pvsc.org/PVSC43/

Congres

Congres	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Verkorte titel	PVSC 2016
Land/Regio	Verenigde Staten van Amerika
Stad	Portland
Periode	5/06/16 → 10/06/16
Internet adres	https://www.ieee-pvsc.org/PVSC43/

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van de Loo, B. W. H., Macco, B., Melskens, J., Verheijen, M. A., & Kessels, W. M. M. E. (2016). Atomic-layer deposited passivation schemes for c-Si solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, blz. 3655-3660). Artikel 7750356 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2016.7750356

@inproceedings{45e7be461fbf44d0adaf7cc835138e01,

title = "Atomic-layer deposited passivation schemes for c-Si solar cells",

abstract = "A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.",

keywords = "charge carrier lifetime, contacts, crystalline silicon, photovoltaic cells, surface passivation",

author = "{van de Loo}, B.W.H. and B. Macco and J. Melskens and M.A. Verheijen and W.M.M.E. Kessels",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750356",

language = "English",

volume = "2016-November",

pages = "3655--3660",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

url = "https://www.ieee-pvsc.org/PVSC43/",

}

van de Loo, BWH, Macco, B, Melskens, J, Verheijen, MA & Kessels, WMME 2016, Atomic-layer deposited passivation schemes for c-Si solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750356, Institute of Electrical and Electronics Engineers, blz. 3655-3660, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, Oregon, Verenigde Staten van Amerika, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750356

Atomic-layer deposited passivation schemes for c-Si solar cells. / van de Loo, B.W.H.; Macco, B.; Melskens, J. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers, 2016. blz. 3655-3660 7750356.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Atomic-layer deposited passivation schemes for c-Si solar cells

AU - van de Loo, B.W.H.

AU - Macco, B.

AU - Melskens, J.

AU - Verheijen, M.A.

AU - Kessels, W.M.M.E.

N1 - Conference code: 43

PY - 2016/11/18

Y1 - 2016/11/18

N2 - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

AB - A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

KW - charge carrier lifetime

KW - contacts

KW - crystalline silicon

KW - photovoltaic cells

KW - surface passivation

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U2 - 10.1109/PVSC.2016.7750356

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M3 - Conference contribution

AN - SCOPUS:85003587451

VL - 2016-November

SP - 3655

EP - 3660

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016

PB - Institute of Electrical and Electronics Engineers

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

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ER -

Atomic-layer deposited passivation schemes for c-Si solar cells

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