Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck; Andrea Llliberi; Llias Katsouras; Willem Van Boekel; Corné Frijters; Joris Maas; Fred Roozeboom; Yves Creyghton; Paul Poodt

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

Gerwin Gelinck
, Andrea Llliberi
, Llias Katsouras
, Willem Van Boekel
, Corné Frijters
, Joris Maas
, Fred Roozeboom
, Yves Creyghton
, Paul Poodt

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm²/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

Originele taal-2	Engels
Titel	24th International Display Workshops, IDW 2017
Uitgeverij	International Display Workshops
Pagina's	1484-1486
Aantal pagina's	3
Volume	2
ISBN van elektronische versie	9781510858992
Status	Gepubliceerd - 1 jan. 2017
Evenement	24th International Display Workshops (IDW 2017) - Sendai, Japan Duur: 6 dec. 2017 → 8 dec. 2017 Congresnummer: 24

Congres

Congres	24th International Display Workshops (IDW 2017)
Verkorte titel	IDW 2017
Land/Regio	Japan
Stad	Sendai
Periode	6/12/17 → 8/12/17

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title = "Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors",

abstract = "Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.",

keywords = "Amorphous metal oxide semiconductor, Atmospheric atomic layer deposition, High mobility, Thin-film transistor",

author = "Gerwin Gelinck and Andrea Llliberi and Llias Katsouras and \{Van Boekel\}, Willem and Corn{\'e} Frijters and Joris Maas and Fred Roozeboom and Yves Creyghton and Paul Poodt",

year = "2017",

month = jan,

day = "1",

language = "English",

volume = "2",

pages = "1484--1486",

booktitle = "24th International Display Workshops, IDW 2017",

publisher = "International Display Workshops",

note = "24th International Display Workshops (IDW 2017), IDW 2017 ; Conference date: 06-12-2017 Through 08-12-2017",

}

Gelinck, G, Llliberi, A, Katsouras, L, Van Boekel, W, Frijters, C, Maas, J, Roozeboom, F, Creyghton, Y & Poodt, P 2017, Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors. in 24th International Display Workshops, IDW 2017. vol. 2, International Display Workshops, blz. 1484-1486, 24th International Display Workshops (IDW 2017), Sendai, Japan, 6/12/17.

TY - GEN

T1 - Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

AU - Gelinck, Gerwin

AU - Llliberi, Andrea

AU - Katsouras, Llias

AU - Van Boekel, Willem

AU - Frijters, Corné

AU - Maas, Joris

AU - Roozeboom, Fred

AU - Creyghton, Yves

AU - Poodt, Paul

N1 - Conference code: 24

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

AB - Indium Zinc Oxide (IZO) films were grown at atmospheric pressure and high deposition rate using spatial atomic layer deposition (s-ALD). TFTs show high field-effect mobility-exceeding 30 cm2/Vs- and excellent stability, demonstrating the potential of s-ALD for future display production.

KW - Amorphous metal oxide semiconductor

KW - Atmospheric atomic layer deposition

KW - High mobility

KW - Thin-film transistor

UR - https://www.scopus.com/pages/publications/85056163449

M3 - Conference contribution

AN - SCOPUS:85056163449

VL - 2

SP - 1484

EP - 1486

BT - 24th International Display Workshops, IDW 2017

PB - International Display Workshops

T2 - 24th International Display Workshops (IDW 2017)

Y2 - 6 December 2017 through 8 December 2017

ER -

Atmospheric spatial-ald of high mobility amorphous metal oxide thin film transistors

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