Area-selective deposition of Ruthenium by combining atomic layer deposition and selective etching

Martijn F.J. Vos, Sonali N. Chopra, Marcel A. Verheijen, John G. Ekerdt, Sumit Agarwal, Wilhelmus M.M. Kessels, Adriaan J.M. Mackus (Corresponding author)

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Originele taal-2Engels
Pagina's (van-tot)3878-3882
Aantal pagina's5
TijdschriftChemistry of Materials
Volume31
Nummer van het tijdschrift11
DOI's
StatusGepubliceerd - 22 mei 2019

Citeer dit

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title = "Area-selective deposition of Ruthenium by combining atomic layer deposition and selective etching",
author = "Vos, {Martijn F.J.} and Chopra, {Sonali N.} and Verheijen, {Marcel A.} and Ekerdt, {John G.} and Sumit Agarwal and Kessels, {Wilhelmus M.M.} and Mackus, {Adriaan J.M.}",
year = "2019",
month = "5",
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doi = "10.1021/acs.chemmater.9b00193",
language = "English",
volume = "31",
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journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
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}

Area-selective deposition of Ruthenium by combining atomic layer deposition and selective etching. / Vos, Martijn F.J.; Chopra, Sonali N.; Verheijen, Marcel A.; Ekerdt, John G.; Agarwal, Sumit; Kessels, Wilhelmus M.M.; Mackus, Adriaan J.M. (Corresponding author).

In: Chemistry of Materials, Vol. 31, Nr. 11, 22.05.2019, blz. 3878-3882.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

T1 - Area-selective deposition of Ruthenium by combining atomic layer deposition and selective etching

AU - Vos, Martijn F.J.

AU - Chopra, Sonali N.

AU - Verheijen, Marcel A.

AU - Ekerdt, John G.

AU - Agarwal, Sumit

AU - Kessels, Wilhelmus M.M.

AU - Mackus, Adriaan J.M.

PY - 2019/5/22

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M3 - Article

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SP - 3878

EP - 3882

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

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