Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition

A. Mameli, Bora Karasulu, Marcel Verheijen, Beatriz Barcones Campo, Bart Macco, Adrie Mackus, Erwin Kessels, Fred Roozeboom (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Uittreksel

Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.
Originele taal-2Engels
Pagina's (van-tot)1250-1257
Aantal pagina's8
TijdschriftChemistry of Materials
Volume31
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 26 feb 2019

Vingerafdruk

Atomic layer deposition
Electron beams
Chemical activation
Density functional theory
Temperature
Physisorption
Proton transfer
Spectroscopic ellipsometry
Silicon
Surface chemistry
Seed
Zinc
Transmission electron microscopy
Hydrogen
Scanning electron microscopy
Substrates
diethylzinc

Citeer dit

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title = "Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition",
abstract = "Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.",
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Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition. / Mameli, A.; Karasulu, Bora; Verheijen, Marcel; Barcones Campo, Beatriz; Macco, Bart; Mackus, Adrie; Kessels, Erwin; Roozeboom, Fred (Corresponding author).

In: Chemistry of Materials, Vol. 31, Nr. 4, 26.02.2019, blz. 1250-1257.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

TY - JOUR

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AU - Mameli, A.

AU - Karasulu, Bora

AU - Verheijen, Marcel

AU - Barcones Campo, Beatriz

AU - Macco, Bart

AU - Mackus, Adrie

AU - Kessels, Erwin

AU - Roozeboom, Fred

PY - 2019/2/26

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N2 - Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.

AB - Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.

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