Area-selective atomic layer deposition of In 2O 3:H Using a μ-plasma printer for local area activation

A. Mameli, Y. Kuang, M. Aghaee, C.K. Ande, B. Karasulu, M. Creatore, A.J.M. Mackus, W.M.M. Kessels, F. Roozeboom

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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Samenvatting

Researchers present a novel method for area-selective atomic layer deposition (AS-ALD) large-area electronics. It is a direct-write ALD process of In 2O 3:H, a highly promising and relevant transparent conductive oxide (TCO) material which makes use of printing technology for surface activation. first the surface of H-terminated silicon materials is locally activated by a μ-plasma printer in air or O 2, and In 2O 3:H is deposited selectively on the activated areas. The selectivity stems from the fact that ALD In 2O 3:H leads to very long nucleation delays on H-terminated silicon materials.

Originele taal-2Engels
Pagina's (van-tot)921-925
Aantal pagina's5
TijdschriftChemistry of Materials
Volume29
Nummer van het tijdschrift3
DOI's
StatusGepubliceerd - 14 feb 2017

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