We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.
|Status||Gepubliceerd - 25 apr 2019|
|Evenement||21st European Conference on Integrated Optics 2019 (ECIO2019) - Het Pand, Gent, België|
Duur: 24 apr 2019 → 26 apr 2019
|Congres||21st European Conference on Integrated Optics 2019 (ECIO2019)|
|Verkorte titel||ECIO 2019|
|Periode||24/04/19 → 26/04/19|
Bolk, J., Ambrosius, H., Latkowski, S., Unal, N., Ritter, D., & Williams, K. (2019). Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. 1-3. Postersessie gepresenteerd op 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, België.