Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

Jeroen Bolk; Huub Ambrosius; Sylwester Latkowski; Nezih Unal; Daniel Ritter; Kevin Williams

Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

Jeroen Bolk, Huub Ambrosius, Sylwester Latkowski, Nezih Unal, Daniel Ritter, Kevin Williams

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We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

Originele taal-2	Engels
Pagina's	1-3
Aantal pagina's	3
Status	Gepubliceerd - 25 apr. 2019
Evenement	21st European Conference on Integrated Optics (ECIO 2019) - Het Pand, Ghent, België Duur: 24 apr. 2019 → 26 apr. 2019 Congresnummer: 21 https://www.ecio-2019.org/ http://www.ecio-conference.org

Congres

Congres	21st European Conference on Integrated Optics (ECIO 2019)
Verkorte titel	ECIO 2019
Land/Regio	België
Stad	Ghent
Periode	24/04/19 → 26/04/19
Internet adres	https://www.ecio-2019.org/ http://www.ecio-conference.org

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title = "Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits",

abstract = "We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.",

author = "Jeroen Bolk and Huub Ambrosius and Sylwester Latkowski and Nezih Unal and Daniel Ritter and Kevin Williams",

year = "2019",

month = apr,

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language = "English",

pages = "1--3",

note = "21st European Conference on Integrated Optics (ECIO 2019), ECIO 2019 ; Conference date: 24-04-2019 Through 26-04-2019",

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T1 - Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

AU - Bolk, Jeroen

AU - Ambrosius, Huub

AU - Latkowski, Sylwester

AU - Unal, Nezih

AU - Ritter, Daniel

AU - Williams, Kevin

N1 - Conference code: 21

PY - 2019/4/25

Y1 - 2019/4/25

N2 - We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

AB - We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

M3 - Poster

SP - 1

EP - 3

T2 - 21st European Conference on Integrated Optics (ECIO 2019)

Y2 - 24 April 2019 through 26 April 2019

ER -

Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

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