Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits

Jeroen Bolk, Huub Ambrosius, Sylwester Latkowski, Nezih Unal, Daniel Ritter, Kevin Williams

Onderzoeksoutput: Bijdrage aan congresPoster

42 Downloads (Pure)

Samenvatting

We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.
Originele taal-2Engels
Pagina's1-3
Aantal pagina's3
StatusGepubliceerd - 25 apr 2019
Evenement21st European Conference on Integrated Optics 2019 (ECIO2019) - Het Pand, Gent, België
Duur: 24 apr 201926 apr 2019
Congresnummer: 21
https://www.ecio-2019.org/

Congres

Congres21st European Conference on Integrated Optics 2019 (ECIO2019)
Verkorte titelECIO 2019
LandBelgië
StadGent
Periode24/04/1926/04/19
Internet adres

    Vingerafdruk

Citeer dit

Bolk, J., Ambrosius, H., Latkowski, S., Unal, N., Ritter, D., & Williams, K. (2019). Application of optical proximity correction for 193 nm deep UV enabled InP photonic integrated circuits. 1-3. Postersessie gepresenteerd op 21st European Conference on Integrated Optics 2019 (ECIO2019), Gent, België.