Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation

L.K.J. Vandamme, L.B. Kiss, O.L.J. Stoelinga

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

3 Citaten (Scopus)

Samenvatting

An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate voltage well above the threshold voltage. We will prove that the effect is due to the strong resistance noise of the parasitic source series resistance. An earlier, controversial result of Park and Van der Ziel can be reinterpreted in the same way.
Originele taal-2Engels
Pagina's (van-tot)697-700
Aantal pagina's4
TijdschriftSolid-State Electronics
Volume43
Nummer van het tijdschrift4
DOI's
StatusGepubliceerd - 1999

Vingerafdruk

Duik in de onderzoeksthema's van 'Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation'. Samen vormen ze een unieke vingerafdruk.

Citeer dit