TY - JOUR
T1 - Anisotropic infrared light emission from quasi-1D layered TiS3
AU - Khatibi, A.
AU - Godiksen, Rasmus
AU - Basuvalingam, Saravana
AU - Pellegrino, Daniele
AU - Bol, Ageeth
AU - Shokri, Babak
AU - Curto, Alberto G.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-1D chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.
AB - Atomically thin semiconductors hold great potential for nanoscale photonic and optoelectronic devices because of their strong light absorption and emission. Despite progress, their application in integrated photonics is hindered particularly by a lack of stable layered semiconductors emitting in the infrared part of the electromagnetic spectrum. Here we show that titanium trisulfide (TiS3), a layered van der Waals material consisting of quasi-1D chains, emits near infrared light centered around 0.91 eV (1360 nm). Its photoluminescence exhibits linear polarization anisotropy and an emission lifetime of 210 ps. At low temperature, we distinguish two spectral contributions with opposite linear polarizations attributed to excitons and defects. Moreover, the dependence on excitation power and temperature suggests that free and bound excitons dominate the excitonic emission at high and low temperatures, respectively. Our results demonstrate the promising properties of TiS3 as a stable semiconductor for optoelectronic and nanophotonic devices operating at telecommunication wavelengths.
KW - excitons
KW - infrared luminescence
KW - linear polarization anisotropy
KW - titanium trisulfide
KW - transition metal trichalcogenides
KW - Excitons
KW - Transition metal trichalcogenides
KW - Titanium trisulfide
KW - Infrared luminescence
KW - Linear polarization anisotropy
UR - http://www.scopus.com/inward/record.url?scp=85081612586&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/ab57ef
DO - 10.1088/2053-1583/ab57ef
M3 - Article
SN - 2053-1583
VL - 7
JO - 2D Materials
JF - 2D Materials
IS - 1
M1 - 015022
ER -