Analytical drain‐current model of p‐ and n‐channel OTFTs for circuit simulation

F. Torricelli, M. Ghittorelli, M. Rapisarda, L. Mariucci, S. Jacob, R. Coppard, E. Cantatore, Z.M. Kovacs-Vajna, L. Colalongo

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

94 Downloads (Pure)

Samenvatting

Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration, owing the availability of both p- and n- channel devices. For the technology development and the design of circuits and digital systems, the accurate physical modeling is mandatory. In this work we propose an unified analytical model for both p- and n- type OTFTs. The model is physically based and accounts for a double exponential density of states (DOS). It is simple, symmetric and accurately describes the below-threshold, linear, and saturation regimes via a unique formulation. The model is eventually validated with the measurements of complementary OTFTs fabricated in a fullyprinted technology
Originele taal-2Engels
TitelProceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-11 September 2014, Yokohama, Japan
Plaats van producties.l.
Uitgeverijs.n.
Aantal pagina's7
StatusGepubliceerd - 2014
EvenementProc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014 - Yokohama, Japan
Duur: 1 jan 2014 → …

Congres

CongresProc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014
Verkorte titelSISPAD 2014
Land/RegioJapan
StadYokohama
Periode1/01/14 → …
AnderProc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Vingerafdruk

Duik in de onderzoeksthema's van 'Analytical drain‐current model of p‐ and n‐channel OTFTs for circuit simulation'. Samen vormen ze een unieke vingerafdruk.

Citeer dit