Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates

Q. Liu; Y. Xi; A. Reniers; A.B. Smolders

doi:10.1109/EuCAP.2016.7481414

Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates

Q. Liu, Y. Xi, A. Reniers, A.B. Smolders

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

2 Citaten (Scopus)

223 Downloads (Pure)

Samenvatting

Electromagnetic band gap (EBG) structures can exhibit high impedance surface (HIS) performance on a lossless substrate. However, the performance of an EBG structure is not only determined by the type of element or physical dimensions, but also by the electrical characteristics of the dielectric substrate. The evolution of an EBG structure from HIS to metamaterial absorber with different lossy silicon substrates is analyzed and presented in a reflection magnitude and phase graph. The conductivity of the used substrate is introduced to represent the loss tangent of the silicon substrate. An equivalent circuit model is developed that models the EBG on a lossy silicon substrate. The small differences between calculated and simulated results are explained by ignoring the patch series inductance Ls and the capacitance Ch between the patch and ground plane. Based on the analysis of the reflection characteristics on lossy silicon substrates, this planar EBG structure provides an acceptable performance in BiCMOS technologies, but cannot be used in low-Ohmic CMOS technologies.

Originele taal-2	Engels
Titel	10th European Conference on Antennas and Propagation (EuCAP), 10-15 April 2016, Davos, Switzerland
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Aantal pagina's	4
ISBN van geprinte versie	978-88-907018-6-3
DOI's	https://doi.org/10.1109/EuCAP.2016.7481414
Status	Gepubliceerd - 2 jun. 2016
Evenement	10th European Conference on Antennas and Propagation (EuCAP 2016) - Davos, Zwitserland Duur: 10 apr. 2016 → 15 apr. 2016 Congresnummer: 10 http://www.eucap.org/

Congres

Congres	10th European Conference on Antennas and Propagation (EuCAP 2016)
Verkorte titel	EuCAP 2016
Land/Regio	Zwitserland
Stad	Davos
Periode	10/04/16 → 15/04/16
Internet adres	http://www.eucap.org/

Toegang tot document

10.1109/EuCAP.2016.7481414

Analysis of the Reflection Characteristics of a Planar EBG Structure on Lossy Silicon SubstratesDefinitieve gepubliceerde versie, 587 KBLicentie: Onbepaald

Citeer dit

@inproceedings{3539eb100be246a7a8efb49db7eed5cd,

title = "Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates",

abstract = "Electromagnetic band gap (EBG) structures can exhibit high impedance surface (HIS) performance on a lossless substrate. However, the performance of an EBG structure is not only determined by the type of element or physical dimensions, but also by the electrical characteristics of the dielectric substrate. The evolution of an EBG structure from HIS to metamaterial absorber with different lossy silicon substrates is analyzed and presented in a reflection magnitude and phase graph. The conductivity of the used substrate is introduced to represent the loss tangent of the silicon substrate. An equivalent circuit model is developed that models the EBG on a lossy silicon substrate. The small differences between calculated and simulated results are explained by ignoring the patch series inductance Ls and the capacitance Ch between the patch and ground plane. Based on the analysis of the reflection characteristics on lossy silicon substrates, this planar EBG structure provides an acceptable performance in BiCMOS technologies, but cannot be used in low-Ohmic CMOS technologies.",

author = "Q. Liu and Y. Xi and A. Reniers and A.B. Smolders",

year = "2016",

month = jun,

day = "2",

doi = "10.1109/EuCAP.2016.7481414",

language = "English",

isbn = "978-88-907018-6-3",

booktitle = "10th European Conference on Antennas and Propagation (EuCAP), 10-15 April 2016, Davos, Switzerland",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "10th European Conference on Antennas and Propagation (EuCAP 2016), EuCAP 2016 ; Conference date: 10-04-2016 Through 15-04-2016",

url = "http://www.eucap.org/",

}

Liu, Q, Xi, Y, Reniers, A & Smolders, AB 2016, Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates. in 10th European Conference on Antennas and Propagation (EuCAP), 10-15 April 2016, Davos, Switzerland., 7481414, Institute of Electrical and Electronics Engineers, Piscataway, 10th European Conference on Antennas and Propagation (EuCAP 2016), Davos, Zwitserland, 10/04/16. https://doi.org/10.1109/EuCAP.2016.7481414

Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates. / Liu, Q.; Xi, Y.; Reniers, A. et al.
10th European Conference on Antennas and Propagation (EuCAP), 10-15 April 2016, Davos, Switzerland. Piscataway: Institute of Electrical and Electronics Engineers, 2016. 7481414.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates

AU - Liu, Q.

AU - Xi, Y.

AU - Reniers, A.

AU - Smolders, A.B.

N1 - Conference code: 10

PY - 2016/6/2

Y1 - 2016/6/2

N2 - Electromagnetic band gap (EBG) structures can exhibit high impedance surface (HIS) performance on a lossless substrate. However, the performance of an EBG structure is not only determined by the type of element or physical dimensions, but also by the electrical characteristics of the dielectric substrate. The evolution of an EBG structure from HIS to metamaterial absorber with different lossy silicon substrates is analyzed and presented in a reflection magnitude and phase graph. The conductivity of the used substrate is introduced to represent the loss tangent of the silicon substrate. An equivalent circuit model is developed that models the EBG on a lossy silicon substrate. The small differences between calculated and simulated results are explained by ignoring the patch series inductance Ls and the capacitance Ch between the patch and ground plane. Based on the analysis of the reflection characteristics on lossy silicon substrates, this planar EBG structure provides an acceptable performance in BiCMOS technologies, but cannot be used in low-Ohmic CMOS technologies.

AB - Electromagnetic band gap (EBG) structures can exhibit high impedance surface (HIS) performance on a lossless substrate. However, the performance of an EBG structure is not only determined by the type of element or physical dimensions, but also by the electrical characteristics of the dielectric substrate. The evolution of an EBG structure from HIS to metamaterial absorber with different lossy silicon substrates is analyzed and presented in a reflection magnitude and phase graph. The conductivity of the used substrate is introduced to represent the loss tangent of the silicon substrate. An equivalent circuit model is developed that models the EBG on a lossy silicon substrate. The small differences between calculated and simulated results are explained by ignoring the patch series inductance Ls and the capacitance Ch between the patch and ground plane. Based on the analysis of the reflection characteristics on lossy silicon substrates, this planar EBG structure provides an acceptable performance in BiCMOS technologies, but cannot be used in low-Ohmic CMOS technologies.

U2 - 10.1109/EuCAP.2016.7481414

DO - 10.1109/EuCAP.2016.7481414

M3 - Conference contribution

SN - 978-88-907018-6-3

BT - 10th European Conference on Antennas and Propagation (EuCAP), 10-15 April 2016, Davos, Switzerland

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 10th European Conference on Antennas and Propagation (EuCAP 2016)

Y2 - 10 April 2016 through 15 April 2016

ER -

Analysis of the reflection characteristics of a planar EBG structure on lossy silicon substrates

Samenvatting

Congres

Toegang tot document

Vingerafdruk

Citeer dit