Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

Y. Jiao, B.W. Tilma, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.
Originele taal-2Engels
TitelProceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium
Plaats van productieGhent, Belgium
UitgeverijUniversiteit Gent
Pagina's97-100
ISBN van geprinte versie978-90-85784-67-8
StatusGepubliceerd - 2011
Evenement16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium - Ghent, België
Duur: 1 dec 20112 dec 2011
http://www.photonics-benelux.org/symp11/

Congres

Congres16th Annual Symposium of the IEEE Photonics Benelux Chapter, December 1-2, 2011, Ghent, Belgium
LandBelgië
StadGhent
Periode1/12/112/12/11
Ander16th Annual Symposium of the IEEE Photonics Benelux Chapter
Internet adres

Vingerafdruk

photometers
quantum dots
waveguides
carrier injection
photons
absorptivity
simulation
electric potential
coefficients

Citeer dit

Jiao, Y., Tilma, B. W., Kotani, J., Nötzel, R., Smit, M. K., & Bente, E. A. J. M. (2011). Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. In Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium (blz. 97-100). Ghent, Belgium: Universiteit Gent.
Jiao, Y. ; Tilma, B.W. ; Kotani, J. ; Nötzel, R. ; Smit, M.K. ; Bente, E.A.J.M. / Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Ghent, Belgium : Universiteit Gent, 2011. blz. 97-100
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title = "Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model",
abstract = "In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.",
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Jiao, Y, Tilma, BW, Kotani, J, Nötzel, R, Smit, MK & Bente, EAJM 2011, Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. in Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Universiteit Gent, Ghent, Belgium, blz. 97-100, Ghent, België, 1/12/11.

Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. / Jiao, Y.; Tilma, B.W.; Kotani, J.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Ghent, Belgium : Universiteit Gent, 2011. blz. 97-100.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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T1 - Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model

AU - Jiao, Y.

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AU - Kotani, J.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

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N2 - In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.

AB - In this contribution we present a rate equation model for the simulation of InAs/InP(100) quantum dots which are used as the active material of waveguide photodetectors. Unlike the normal rate equation models in literature which are built for carrier injection and photon emission, our model is modified for the carrier extraction and photon absorption. The simulation results are compared with previous experimental results. Experimental observations are explained in terms of fundamental properties of the quantum dots, e.g. the bias voltage dependent carrier extraction rate and absorption coefficient.

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Jiao Y, Tilma BW, Kotani J, Nötzel R, Smit MK, Bente EAJM. Analysis of the performance of InAs/InP(100) quantum dot waveguide photodetectors using a rate quation model. In Proceedings of the 16th Annual symposium of the IEEE Photonics Benelux Chapter, 01-02 December 2011, Ghent, Belgium. Ghent, Belgium: Universiteit Gent. 2011. blz. 97-100