Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.
Originele taal-2Engels
TitelProceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom
Plaats van productieLondon
UitgeverijInstitution of Engineering and Technology (IET)
Pagina'sThP14-1/2
StatusGepubliceerd - 2010

Vingerafdruk

amplifiers
quantum dots
ground state
wavelengths
excitation
energy

Citeer dit

Tilma, B. W., Tahvili, M. S., Kotani, J., Nötzel, R., Smit, M. K., & Bente, E. A. J. M. (2010). Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom (blz. ThP14-1/2). London: Institution of Engineering and Technology (IET).
Tilma, B.W. ; Tahvili, M.S. ; Kotani, J. ; Nötzel, R. ; Smit, M.K. ; Bente, E.A.J.M. / Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. London : Institution of Engineering and Technology (IET), 2010. blz. ThP14-1/2
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title = "Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers",
abstract = "InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.",
author = "B.W. Tilma and M.S. Tahvili and J. Kotani and R. N{\"o}tzel and M.K. Smit and E.A.J.M. Bente",
year = "2010",
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Tilma, BW, Tahvili, MS, Kotani, J, Nötzel, R, Smit, MK & Bente, EAJM 2010, Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. in Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. Institution of Engineering and Technology (IET), London, blz. ThP14-1/2.

Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. / Tilma, B.W.; Tahvili, M.S.; Kotani, J.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. London : Institution of Engineering and Technology (IET), 2010. blz. ThP14-1/2.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

TY - GEN

T1 - Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

AU - Tilma, B.W.

AU - Tahvili, M.S.

AU - Kotani, J.

AU - Nötzel, R.

AU - Smit, M.K.

AU - Bente, E.A.J.M.

PY - 2010

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N2 - InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.

AB - InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.

M3 - Conference contribution

SP - ThP14-1/2

BT - Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom

PB - Institution of Engineering and Technology (IET)

CY - London

ER -

Tilma BW, Tahvili MS, Kotani J, Nötzel R, Smit MK, Bente EAJM. Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers. In Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom. London: Institution of Engineering and Technology (IET). 2010. blz. ThP14-1/2