Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers

B.W. Tilma, M.S. Tahvili, J. Kotani, R. Nötzel, M.K. Smit, E.A.J.M. Bente

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

41 Downloads (Pure)

Samenvatting

InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.
Originele taal-2Engels
TitelProceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom
Plaats van productieLondon
UitgeverijInstitution of Engineering and Technology (IET)
Pagina'sThP14-1/2
StatusGepubliceerd - 2010

Vingerafdruk Duik in de onderzoeksthema's van 'Analysis of the current dependency of the small signal gain spectrum in InAs/InP(100) quantum-dot amplifiers'. Samen vormen ze een unieke vingerafdruk.

Citeer dit