InAs/InP(100) quantum-dot amplifiers have been fabricated with a 1700nm peak wavelength. The measured small-signal gain spectra have been analyzed with a quantum-dot rate-equation model. The average energies of the ground state EGS=0.716eV and the excited state EES=0.760 transitions have been determined. The origin of the spectral behavior has been analyzed.
|Titel||Proceedings of the 15th European Conference on Integrated Optics, ECIO 2010, April 06-09, 2010, Cambridge, United Kingdom|
|Plaats van productie||London|
|Uitgeverij||Institution of Engineering and Technology (IET)|
|Status||Gepubliceerd - 2010|