Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

L. Hennen; E.H.A. Granneman; W.M.M. Kessels

doi:10.1109/PVSC.2012.6317783

Analysis of blister formation in spatial ALD Al₂O₃ for silicon surface passivation

L. Hennen
, E.H.A. Granneman
, W.M.M. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

29 Citaten (Scopus)

Samenvatting

Aluminum oxide (Al₂O₃) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al₂O₃ bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

Originele taal-2	Engels
Titel	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pagina's	1049-1054
Aantal pagina's	6
DOI's	https://doi.org/10.1109/PVSC.2012.6317783
Status	Gepubliceerd - 26 nov 2012
Evenement	38th IEEE Photovoltaic Specialists Conference (PVSC 2012) - Austin Convention Center, Austin, Verenigde Staten van Amerika Duur: 3 jun 2012 → 8 jun 2012 Congresnummer: 38 https://www.ieee-pvsc.org/PVSC38/

Congres

Congres	38th IEEE Photovoltaic Specialists Conference (PVSC 2012)
Verkorte titel	PVSC 2012
Land/Regio	Verenigde Staten van Amerika
Stad	Austin
Periode	3/06/12 → 8/06/12
Ander	PVSC
Internet adres	https://www.ieee-pvsc.org/PVSC38/

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10.1109/PVSC.2012.6317783

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Citeer dit

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title = "Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation",

abstract = "Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.",

keywords = "amorphous materials, charge carrier lifetime, dielectric films, hydrogen, photovoltaic cells, silicon",

author = "L. Hennen and E.H.A. Granneman and W.M.M. Kessels",

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note = "38th IEEE Photovoltaic Specialists Conference (PVSC 2012), PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

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Hennen, L, Granneman, EHA & Kessels, WMM 2012, Analysis of blister formation in spatial ALD Al₂O₃ for silicon surface passivation. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317783, blz. 1049-1054, 38th IEEE Photovoltaic Specialists Conference (PVSC 2012), Austin, Texas, Verenigde Staten van Amerika, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317783

TY - GEN

T1 - Analysis of blister formation in spatial ALD Al2O3 for silicon surface passivation

AU - Hennen, L.

AU - Granneman, E.H.A.

AU - Kessels, W.M.M.

N1 - Conference code: 38

PY - 2012/11/26

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N2 - Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

AB - Aluminum oxide (Al2O3) thin films yield excellent surface passivation of silicon solar cells. However, unwanted delamination, known as blisters, can occur upon annealing. In this research, blistering is linked to hydrogen diffusion in the bulk. Results reveal competition between diffusion lateral and perpendicular to the interface. Therefore, large blister densities coincide with small blister diameters and vice versa. The total blister volume, however, is independent of blister size distribution, but linked to hydrogen diffusion from the Al2O3 bulk. The blister volume was determined using AFM measurements, which show identical blister shapes for different blister sizes. Additionally, no direct relationship between blister formation and minority carrier was found.

KW - amorphous materials

KW - charge carrier lifetime

KW - dielectric films

KW - hydrogen

KW - photovoltaic cells

KW - silicon

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DO - 10.1109/PVSC.2012.6317783

M3 - Conference contribution

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