An inductorless wideband balun-LNA in 65nm CMOS with balanced output

S.C. Blaakmeer; E.A.M. Klumperink; B. Nauta; D. M.W. Leenaerts

doi:10.1109/ESSCIRC.2007.4430319

An inductorless wideband balun-LNA in 65nm CMOS with balanced output

S.C. Blaakmeer, E.A.M. Klumperink, B. Nauta, D. M.W. Leenaerts

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

62 Citaten (Scopus)

Samenvatting

An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ± 2degrees, 15dB gain, S11<-14dB, IIP3 = OdBm and IIP2 higher than +2OdBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm². The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

Originele taal-2	Engels
Titel	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Redacteuren	Doris Schmitt-Landsiedel, Tobias Noll
Pagina's	364-367
Aantal pagina's	4
DOI's	https://doi.org/10.1109/ESSCIRC.2007.4430319
Status	Gepubliceerd - 14 jan. 2008
Evenement	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Duitsland Duur: 11 sep. 2007 → 13 sep. 2007

Congres

Congres	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Land/Regio	Duitsland
Stad	Munich
Periode	11/09/07 → 13/09/07

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@inproceedings{ae72867b1fd249c093974b053c865321,

title = "An inductorless wideband balun-LNA in 65nm CMOS with balanced output",

abstract = "An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ± 2degrees, 15dB gain, S11<-14dB, IIP3 = OdBm and IIP2 higher than +2OdBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.",

author = "S.C. Blaakmeer and E.A.M. Klumperink and B. Nauta and Leenaerts, {D. M.W.}",

year = "2008",

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doi = "10.1109/ESSCIRC.2007.4430319",

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editor = "Doris Schmitt-Landsiedel and Tobias Noll",

booktitle = "ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference",

note = "ESSCIRC 2007 - 33rd European Solid-State Circuits Conference ; Conference date: 11-09-2007 Through 13-09-2007",

}

Blaakmeer, SC, Klumperink, EAM, Nauta, B & Leenaerts, DMW 2008, An inductorless wideband balun-LNA in 65nm CMOS with balanced output. in D Schmitt-Landsiedel & T Noll (uitgave), ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430319, blz. 364-367, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Duitsland, 11/09/07. https://doi.org/10.1109/ESSCIRC.2007.4430319

An inductorless wideband balun-LNA in 65nm CMOS with balanced output. / Blaakmeer, S.C.; Klumperink, E.A.M.; Nauta, B. et al.
ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. uitgave / Doris Schmitt-Landsiedel; Tobias Noll. 2008. blz. 364-367 4430319.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Blaakmeer, S.C.

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N2 - An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ± 2degrees, 15dB gain, S11<-14dB, IIP3 = OdBm and IIP2 higher than +2OdBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

AB - An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ± 2degrees, 15dB gain, S11<-14dB, IIP3 = OdBm and IIP2 higher than +2OdBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.

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An inductorless wideband balun-LNA in 65nm CMOS with balanced output

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