An improved physics-based LTSpice compact electro-thermal model for a SiC power MOSFET with experimental validation

Md Maksudul Hossain, Lorenzo Ceccarelli, Arman Ur Rashid, Ramchandra M. Kotecha, H. Alan Mantooth

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

5 Citaten (Scopus)

Samenvatting

A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE's empirical model of the same device has also been presented.

Originele taal-2Engels
TitelIECON 2018
Subtitel44th Annual Conference of the IEEE Industrial Electronics Society
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1011-1016
Aantal pagina's6
ISBN van elektronische versie978-1-5090-6684-1
ISBN van geprinte versie978-1-5090-6685-8
DOI's
StatusGepubliceerd - 26 dec 2018
Extern gepubliceerdJa
Evenement44th Annual Conference of the IEEE Industrial Electronics Society (IECON 2018) - Washington, Verenigde Staten van Amerika
Duur: 21 okt 201823 okt 2018
Congresnummer: 44
http://www.iecon2018.org/

Congres

Congres44th Annual Conference of the IEEE Industrial Electronics Society (IECON 2018)
Verkorte titelIECON
Land/RegioVerenigde Staten van Amerika
StadWashington
Periode21/10/1823/10/18
Internet adres

Bibliografische nota

Publisher Copyright:
© 2018 IEEE.

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