An empiric approach to establishing MOSFET failure rate induced by single-event burnout

J. Duivenbode, van, B.J.M. Smet

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

14 Citaten (Scopus)
2 Downloads (Pure)

Samenvatting

Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing
Originele taal-2Engels
TitelProceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland
Plaats van productiePoznan, Poland
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's102-107
ISBN van geprinte versie978-1-4244-1742-1
DOI's
StatusGepubliceerd - 2008
Evenement13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008) - Poznań, Polen
Duur: 1 sep 20083 sep 2008
Congresnummer: 13
http://www.epe-pemc2008.put.poznan.pl/home_news.php

Congres

Congres13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008)
Verkorte titelEPE-PEMC 2008
LandPolen
StadPoznań
Periode1/09/083/09/08
AnderPower Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th
Internet adres

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  • Citeer dit

    Duivenbode, van, J., & Smet, B. J. M. (2008). An empiric approach to establishing MOSFET failure rate induced by single-event burnout. In Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland (blz. 102-107). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/EPEPEMC.2008.4635251