An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner

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Samenvatting

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
Originele taal-2Engels
Titel2018 IEEE Asia-Pacific Microwave Conference, APMC
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1528-1530
Aantal pagina's3
ISBN van elektronische versie978-4-9023-3945-1
DOI's
StatusGepubliceerd - 16 jan 2019
Evenement30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duur: 6 nov 20189 nov 2018

Congres

Congres30th Asia-Pacific Microwave Conference, APMC 2018
LandJapan
StadKyoto
Periode6/11/189/11/18

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