An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)

Uittreksel

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
TaalEngels
Titel2018 IEEE Asia-Pacific Microwave Conference, APMC
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1528-1530
Aantal pagina's3
ISBN van elektronische versie978-4-9023-3945-1
DOI's
StatusGepubliceerd - 16 jan 2019
Evenement30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duur: 6 nov 20189 nov 2018

Congres

Congres30th Asia-Pacific Microwave Conference, APMC 2018
LandJapan
StadKyoto
Periode6/11/189/11/18

Vingerafdruk

waveguides
silicon
microstrip transmission lines
electromagnetic coupling
insertion loss
CMOS
chips
air
metals

Trefwoorden

    Citeer dit

    Kaul, P., Aljarosha, A., Smolders, A. B., Baltus, P. G. M., Matters - Kammerer, M., & Maaskant, R. (2019). An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner. In 2018 IEEE Asia-Pacific Microwave Conference, APMC (blz. 1528-1530). [8617206] Piscataway: Institute of Electrical and Electronics Engineers. DOI: 10.23919/APMC.2018.8617206
    Kaul, P. ; Aljarosha, A. ; Smolders, A.B. ; Baltus, P.G.M. ; Matters - Kammerer, M. ; Maaskant, R./ An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner. 2018 IEEE Asia-Pacific Microwave Conference, APMC. Piscataway : Institute of Electrical and Electronics Engineers, 2019. blz. 1528-1530
    @inproceedings{0d8fa30a243f4936933506b0612ec690,
    title = "An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner",
    abstract = "A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.",
    keywords = "E-Band, Electromagnetic coupling, Millimeter wave integrated circuits (MMIC), Power combiners, Waveguide transitions",
    author = "P. Kaul and A. Aljarosha and A.B. Smolders and P.G.M. Baltus and {Matters - Kammerer}, M. and R. Maaskant",
    year = "2019",
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    Kaul, P, Aljarosha, A, Smolders, AB, Baltus, PGM, Matters - Kammerer, M & Maaskant, R 2019, An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner. in 2018 IEEE Asia-Pacific Microwave Conference, APMC., 8617206, Institute of Electrical and Electronics Engineers, Piscataway, blz. 1528-1530, Kyoto, Japan, 6/11/18. DOI: 10.23919/APMC.2018.8617206

    An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner. / Kaul, P.; Aljarosha, A.; Smolders, A.B.; Baltus, P.G.M.; Matters - Kammerer, M.; Maaskant, R.

    2018 IEEE Asia-Pacific Microwave Conference, APMC. Piscataway : Institute of Electrical and Electronics Engineers, 2019. blz. 1528-1530 8617206.

    Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

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    T1 - An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner

    AU - Kaul,P.

    AU - Aljarosha,A.

    AU - Smolders,A.B.

    AU - Baltus,P.G.M.

    AU - Matters - Kammerer,M.

    AU - Maaskant,R.

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    N2 - A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.

    AB - A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.

    KW - E-Band

    KW - Electromagnetic coupling

    KW - Millimeter wave integrated circuits (MMIC)

    KW - Power combiners

    KW - Waveguide transitions

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    Kaul P, Aljarosha A, Smolders AB, Baltus PGM, Matters - Kammerer M, Maaskant R. An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner. In 2018 IEEE Asia-Pacific Microwave Conference, APMC. Piscataway: Institute of Electrical and Electronics Engineers. 2019. blz. 1528-1530. 8617206. Beschikbaar vanaf, DOI: 10.23919/APMC.2018.8617206