An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress

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Samenvatting

The ever increasing throughput and demand for faster motion control in the industry require power electronics with higher power densities and increased bandwidths are required to control the mechanical components. The Silicon-Carbide (SiC) MOSFET contains significant improvements over the traditional Silicon (Si) MOSFET and is a promising key component to overcome these challenges. The improved properties of SiC MOSFETs over Si MOSFETs suggest that switching frequencies and load currents can be higher. Also for SiC MOSFETs holds that repetitive load profiles result in cyclic junction temperatures which cause considerable thermal stress inside the MOSFET package. In this paper a thermo-electrical model is developed to determine the limiting repetitive power dissipation profiles. On basis of the simulation results a measurement setup is dimensioned and used to determine the lifetime of SiC MOSFETs at defined thermal cycling profiles. The research is focused on the test method and the strategy to verify the test parameter values such as junction temperature estimation. Initial measurements are performed with a Proof Of Concept (POC) test setup.

Originele taal-2Engels
TitelPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
ISBN van elektronische versie9783800739240
StatusGepubliceerd - 1 jan 2015
Evenement2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Duitsland
Duur: 19 mei 201520 mei 2015

Congres

Congres2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
LandDuitsland
StadNuremberg
Periode19/05/1520/05/15

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  • Citeer dit

    Have, R. T., Vermulst, B., & van Duivenbode, J. (2015). An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149141] Institute of Electrical and Electronics Engineers. https://ieeexplore.ieee.org/document/7149141/