An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers; Kevin A. Williams; Jos J.G.M. van der Tol; Yuqing Jiao

doi:10.1109/JQE.2020.3047119

An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers (Corresponding author), Kevin A. Williams, Jos J.G.M. van der Tol, Yuqing Jiao

Photonic Integration

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

Samenvatting

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

Originele taal-2	Engels
Artikelnummer	0600306
Aantal pagina's	6
Tijdschrift	IEEE Journal of Quantum Electronics
Volume	57
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1109/JQE.2020.3047119
Status	Gepubliceerd - feb 2021

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10.1109/JQE.2020.3047119

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abstract = "We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.",

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AU - Jiao, Yuqing

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AB - We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

KW - Photonic integrated circuits

KW - nanophotonics

KW - photonic crystals

KW - polarization

KW - polarization converters

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KW - Silicon nitride

KW - Loss measurement

KW - Gratings

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