An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

C. Garripoli, J.L.J.P. van der Steen, E. Smits, G.H. Gelinck, A.H.M. van Roermund, E. Cantatore

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

17 Citaten (Scopus)
3 Downloads (Pure)

Samenvatting

Amorphous IGZO (a-IGZO) TFTs fabricated on flexible large-area substrates provide better mobility than a-Si or organic counterparts and good uniformity. These features make a-IGZO TFTs an attractive technology for large-area sensing (e.g. strain, pressure, IR), low-cost RFIDs augmented with sensors and monitoring of biopotentials. In this context, it is crucial to accurately transform analogue sensor signals in a robust representation. The most common choice is a synchronous digital word, but a two-level PWM representation is another interesting possibility. Binary PWM can be transmitted on wire or via RF amplitude modulation with high immunity to noise and interferers.

Originele taal-2Engels
Titel2017 IEEE International Solid-State Circuits Conference (ISSCC), 5-9 February 2017, San Francisco, California
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's260-261
Aantal pagina's2
ISBN van elektronische versie978-1-5090-3758-2
ISBN van geprinte versie978-1-5090-3759-9
DOI's
StatusGepubliceerd - 2 mrt 2017
Evenement64th IEEE International Solid-State Circuits Conference (ISSCC 2017) - San Francisco, Verenigde Staten van Amerika
Duur: 5 feb 20179 feb 2017
Congresnummer: 61

Congres

Congres64th IEEE International Solid-State Circuits Conference (ISSCC 2017)
Verkorte titelISSCC 2017
LandVerenigde Staten van Amerika
StadSan Francisco
Periode5/02/179/02/17

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