Aluminum oxide and other ALD materials for Si surface passivation

G. Dingemans; W.M.M. Kessels

doi:10.1149/1.3633680

Aluminum oxide and other ALD materials for Si surface passivation

G. Dingemans, W.M.M. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

35 Citaten (Scopus)

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The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

Originele taal-2	Engels
Titel	Atomic Layer Deposition Applications 7
Redacteuren	J. Elam, S. De Gendt, A. Londergan, S. Bent, xx et al.
Pagina's	293-301
DOI's	https://doi.org/10.1149/1.3633680
Status	Gepubliceerd - 2011
Evenement	220th Electrochemical Society Meeting (ECS 2011) - Westin Boston Waterfront and The Boston Convention/Exhibition Center, Boston, Verenigde Staten van Amerika Duur: 1 jan. 2011 → … Congresnummer: 220 https://www.electrochem.org/220

Publicatie series

Naam	ECS Transactions
Volume	41
ISSN van geprinte versie	1938-6737

Congres

Congres	220th Electrochemical Society Meeting (ECS 2011)
Verkorte titel	ECS 2011
Land/Regio	Verenigde Staten van Amerika
Stad	Boston
Periode	1/01/11 → …
Ander	220th ECS Meeting
Internet adres	https://www.electrochem.org/220

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10.1149/1.3633680

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@inproceedings{40bd67d8bf704c3e92e57bd6cf2cb93d,

title = "Aluminum oxide and other ALD materials for Si surface passivation",

abstract = "The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.",

author = "G. Dingemans and W.M.M. Kessels",

year = "2011",

doi = "10.1149/1.3633680",

language = "English",

series = "ECS Transactions",

pages = "293--301",

editor = "J. Elam and {De Gendt}, S. and A. Londergan and S. Bent and {et al.}, xx",

booktitle = "Atomic Layer Deposition Applications 7",

note = "220th Electrochemical Society Meeting (ECS 2011), ECS 2011 ; Conference date: 01-01-2011",

url = "https://www.electrochem.org/220",

}

Dingemans, G & Kessels, WMM 2011, Aluminum oxide and other ALD materials for Si surface passivation. in J Elam, S De Gendt, A Londergan, S Bent & X et al. (uitgave), Atomic Layer Deposition Applications 7. ECS Transactions, vol. 41, blz. 293-301, 220th Electrochemical Society Meeting (ECS 2011), Boston, Massachusetts, Verenigde Staten van Amerika, 1/01/11. https://doi.org/10.1149/1.3633680

TY - GEN

T1 - Aluminum oxide and other ALD materials for Si surface passivation

AU - Dingemans, G.

AU - Kessels, W.M.M.

N1 - Conference code: 220

PY - 2011

Y1 - 2011

N2 - The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

AB - The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

U2 - 10.1149/1.3633680

DO - 10.1149/1.3633680

M3 - Conference contribution

T3 - ECS Transactions

SP - 293

EP - 301

BT - Atomic Layer Deposition Applications 7

A2 - Elam, J.

A2 - De Gendt, S.

A2 - Londergan, A.

A2 - Bent, S.

A2 - et al., xx

T2 - 220th Electrochemical Society Meeting (ECS 2011)

Y2 - 1 January 2011

ER -

Aluminum oxide and other ALD materials for Si surface passivation

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Publicatie series

Congres

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