All-polymer ferroelectric transistors

We demonstrate thin-film ferroelectric transistors, made entirely from organic materials that are processed from solution. The devices consist of thin ferroelectric poly(vinylidene fluoride/trifluoroethylene) films sandwiched between electrodes made of conducting poly(3,4-ethylenedioxythiophene) stabilized with polystyrene-4-sulphonic acid. On top of this stack, an organic semiconductor is applied. The ferroelectric transistors, constructed using unipolar p - or n -type semiconductor channels, have remnant current modulations of ∼ 103 with a retention time of hours. They can be switched in 0.1-1 ms at operating voltages less than 10 V.