All-oxide MoOx/SnOx charge recombination interconnects for inverted organic tandem solar cells

Tim Becker; Sara Trost; Andreas Behrendt; Ivan Shutsko; Andreas Polywka; Patrick Görrn; Philip Reckers; Chittaranjan Das; Thomas Mayer; Dario Di Carlo Rasi; Koen H. Hendriks; Martijn M. Wienk; René A.J. Janssen; Thomas Riedl

doi:10.1002/aenm.201702533

All-oxide MoO_x/SnO_x charge recombination interconnects for inverted organic tandem solar cells

Tim Becker, Sara Trost, Andreas Behrendt, Ivan Shutsko, Andreas Polywka, Patrick Görrn, Philip Reckers, Chittaranjan Das, Thomas Mayer, Dario Di Carlo Rasi, Koen H. Hendriks, Martijn M. Wienk, René A.J. Janssen, Thomas Riedl

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Samenvatting

Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoO_x and low-WF tin oxide (SnO_x). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoO_x and SnO_x comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoO_x and SnO_x, without the requirement of an additional metal or organic dipole layer. The presented MoO_x/SnO_x interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.

Originele taal-2	Engels
Artikelnummer	1702533
Aantal pagina's	8
Tijdschrift	Advanced Energy Materials
Volume	8
Nummer van het tijdschrift	10
DOI's	https://doi.org/10.1002/aenm.201702533
Status	Gepubliceerd - 5 apr. 2018

Financiering

The authors acknowledge the German Federal Ministry for Education and Research (Grant No. 03EK3529E) and the Deutsche Forschungsgemeinschaft (DFG) (Grants: MA2104/2-2 and RI1551/4-2) for financial support. The research leading to these results has received partial funding from the European Unions’s 7th Framework Programme under Grant Agreement no. 604148 (MUJULIMA). P.G. acknowledges funding by the Emmy-Noether-Programm (Grant: GO 2049/1-1) of the DFG (Deutsche Forschungsgemeinschaft).

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Becker, T., Trost, S., Behrendt, A., Shutsko, I., Polywka, A., Görrn, P., Reckers, P., Das, C., Mayer, T., Di Carlo Rasi, D., Hendriks, K. H., Wienk, M. M., Janssen, R. A. J., & Riedl, T. (2018). All-oxide MoO_x/SnO_x charge recombination interconnects for inverted organic tandem solar cells. Advanced Energy Materials, 8(10), Artikel 1702533. https://doi.org/10.1002/aenm.201702533

@article{191d0661cf4546c28a9afd411546f9c9,

title = "All-oxide MoOx/SnOx charge recombination interconnects for inverted organic tandem solar cells",

abstract = "Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoOx and low-WF tin oxide (SnOx). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoOx and SnOx comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoOx and SnOx, without the requirement of an additional metal or organic dipole layer. The presented MoOx/SnOx interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.",

keywords = "atomic layer deposition, charge recombination layers, inverted organic solar cells, organic tandem solar cells, tin oxide",

author = "Tim Becker and Sara Trost and Andreas Behrendt and Ivan Shutsko and Andreas Polywka and Patrick G{\"o}rrn and Philip Reckers and Chittaranjan Das and Thomas Mayer and {Di Carlo Rasi}, Dario and Hendriks, {Koen H.} and Wienk, {Martijn M.} and Janssen, {Ren{\'e} A.J.} and Thomas Riedl",

year = "2018",

month = apr,

day = "5",

doi = "10.1002/aenm.201702533",

language = "English",

volume = "8",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "John Wiley and Sons Inc",

number = "10",

}

TY - JOUR

T1 - All-oxide MoOx/SnOx charge recombination interconnects for inverted organic tandem solar cells

AU - Becker, Tim

AU - Trost, Sara

AU - Behrendt, Andreas

AU - Shutsko, Ivan

AU - Polywka, Andreas

AU - Görrn, Patrick

AU - Reckers, Philip

AU - Das, Chittaranjan

AU - Mayer, Thomas

AU - Di Carlo Rasi, Dario

AU - Hendriks, Koen H.

AU - Wienk, Martijn M.

AU - Janssen, René A.J.

AU - Riedl, Thomas

PY - 2018/4/5

Y1 - 2018/4/5

N2 - Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoOx and low-WF tin oxide (SnOx). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoOx and SnOx comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoOx and SnOx, without the requirement of an additional metal or organic dipole layer. The presented MoOx/SnOx interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.

AB - Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoOx and low-WF tin oxide (SnOx). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoOx and SnOx comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoOx and SnOx, without the requirement of an additional metal or organic dipole layer. The presented MoOx/SnOx interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.

KW - atomic layer deposition

KW - charge recombination layers

KW - inverted organic solar cells

KW - organic tandem solar cells

KW - tin oxide

UR - http://www.scopus.com/inward/record.url?scp=85038836398&partnerID=8YFLogxK

U2 - 10.1002/aenm.201702533

DO - 10.1002/aenm.201702533

M3 - Article

AN - SCOPUS:85038836398

SN - 1614-6832

VL - 8

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 10

M1 - 1702533

ER -

All-oxide MoOx/SnOx charge recombination interconnects for inverted organic tandem solar cells