All-optical switching in a quantum dot switch

R. Prasanth, J.E.M. Haverkort, A. Deepthy, E.W. Bogaart, J.J.G.M. Tol, van der, E.A. Patent, G. Zhao, Q. Gong, P.J. Veldhoven, van, R. Nötzel, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.
Originele taal-2Engels
Titelproc. Semiconductor Advances for Future Electronics (SAFE) 03
Plaats van productieVeldhoven, The Netherlands
UitgeverijSTW Technology Foundation
Pagina's635-638
ISBN van geprinte versie90-73461-39-1
StatusGepubliceerd - 2003
EvenementSemiconductor Advances for Future Electronics (SAFE) 03 - Veldhoven, Nederland
Duur: 25 nov 200326 nov 2003

Congres

CongresSemiconductor Advances for Future Electronics (SAFE) 03
LandNederland
StadVeldhoven
Periode25/11/0326/11/03
AnderSAFE 03, Veldhoven, The Netherlands

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  • Citeer dit

    Prasanth, R., Haverkort, J. E. M., Deepthy, A., Bogaart, E. W., Tol, van der, J. J. G. M., Patent, E. A., ... Wolter, J. H. (2003). All-optical switching in a quantum dot switch. In proc. Semiconductor Advances for Future Electronics (SAFE) 03 (blz. 635-638). Veldhoven, The Netherlands: STW Technology Foundation.