Achievement of InSb quantum dots on InP(100) substrates

W. Lu, T. Rohel, N. Bertru, H. Folliot, C. Paranthoën, J.M. Jancu, A. Létoublon, A. Le Corre, C. Gatel, A. Ponchet, N. Combe, J.M. Ulloa, P.M. Koenraad

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The formation of InSb quantum dots within a GaAs0.51Sb0.49 matrix lattice matched to InP is investigated. We show that the deposit of InSb on GaAs0.51Sb0.49 alloy surface, allows the achievement of a high density of InSb islands without dislocations. A strong dissolution of InSb quantum dots occurs during the capping with a GaAsSb layer. Reflection high energy electron diffraction analysis shows that InSb island dissolution occurs during the growth interruption under As and Sb. We propose a procedure based on the deposit of a thin GaSb capping layer on top of InSb islands to prevent the As/Sb exchange. Optical properties are investigated using photoluminescence. Electronic properties are discussed within an improved tight-binding model.
Originele taal-2Engels
Artikelnummer060210
Pagina's (van-tot)060210-1/3
Aantal pagina's3
TijdschriftJournal of Applied Physics
Volume49
Nummer van het tijdschrift6
DOI's
StatusGepubliceerd - 2010

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