Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

J.J.M. Kwaspen; M.I. Lepsa; T.G. Roer, van de; W.C. Vleuten, van der

doi:10.1049/el:19971107

Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

J.J.M. Kwaspen
, M.I. Lepsa
, T.G. Roer, van de
, W.C. Vleuten, van der

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

3 Citaten (Scopus)

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The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

Originele taal-2	Engels
Pagina's (van-tot)	1657-1658
Tijdschrift	Electronics Letters
Volume	33
Nummer van het tijdschrift	19
DOI's	https://doi.org/10.1049/el:19971107
Status	Gepubliceerd - 1997

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@article{ce522d1b6100494e8fcbc2a9ae9f5b31,

title = "Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers",

abstract = "The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted",

author = "J.J.M. Kwaspen and M.I. Lepsa and \{Roer, van de\}, T.G. and \{Vleuten, van der\}, W.C.",

year = "1997",

doi = "10.1049/el:19971107",

language = "English",

volume = "33",

pages = "1657--1658",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "19",

}

TY - JOUR

T1 - Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

AU - Kwaspen, J.J.M.

AU - Lepsa, M.I.

AU - Roer, van de, T.G.

AU - Vleuten, van der, W.C.

PY - 1997

Y1 - 1997

N2 - The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

AB - The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

U2 - 10.1049/el:19971107

DO - 10.1049/el:19971107

M3 - Article

SN - 0013-5194

VL - 33

SP - 1657

EP - 1658

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

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