Absolute densities of reaction products from plasma etching of quartz

E.M. van Veldhuizen, Th. Bisschops, E.J.W. van Vliembergen, J.H.M.C. van Wolput

Onderzoeksoutput: Bijdrage aan tijdschriftCommentaar/Brief aan de redacteurAcademicpeer review

29 Citaties (Scopus)

Uittreksel

The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.

Originele taal-2Engels
Pagina's (van-tot)2205-2208
Aantal pagina's4
TijdschriftJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume3
Nummer van het tijdschrift6
DOI's
StatusGepubliceerd - 1 jan 1985

Vingerafdruk

Quartz
Plasma etching
Infrared absorption
plasma etching
Carbon Monoxide
Reaction products
reaction products
infrared absorption
quartz
ultraviolet emission
Etching
etching
optics
Plasmas
silicon tetrafluoride

Citeer dit

van Veldhuizen, E.M. ; Bisschops, Th. ; van Vliembergen, E.J.W. ; van Wolput, J.H.M.C. / Absolute densities of reaction products from plasma etching of quartz. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films. 1985 ; Vol. 3, Nr. 6. blz. 2205-2208.
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title = "Absolute densities of reaction products from plasma etching of quartz",
abstract = "The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—{\^a}–º SiF4+ 2CO.",
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Absolute densities of reaction products from plasma etching of quartz. / van Veldhuizen, E.M.; Bisschops, Th.; van Vliembergen, E.J.W.; van Wolput, J.H.M.C.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, Vol. 3, Nr. 6, 01.01.1985, blz. 2205-2208.

Onderzoeksoutput: Bijdrage aan tijdschriftCommentaar/Brief aan de redacteurAcademicpeer review

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T1 - Absolute densities of reaction products from plasma etching of quartz

AU - van Veldhuizen, E.M.

AU - Bisschops, Th.

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AU - van Wolput, J.H.M.C.

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N2 - The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.

AB - The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.

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