A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface

J.M.M. Nijs, de, C. Carvalho, M. Santos, R. Martins

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    Samenvatting

    The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.
    Originele taal-2Engels
    Pagina's (van-tot)339-342
    Aantal pagina's4
    TijdschriftApplied Surface Science
    Volume52
    Nummer van het tijdschrift4
    DOI's
    StatusGepubliceerd - 1991

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