Samenvatting
This paper deals with the development of a PSpice based temperature dependent modelling platform for the evaluation of silicon based IGBT power modules. The developed device modelling platform is intended to be used for the design and assessment of converter valves/cells for potential high power applications in transmission and distribution networks. An extended version of a previous modelling platform implemented in PSpice is presented here taking into account temperature dependence up to (and even beyond) the specified junction temperature of 125°C of 4.5kV StakPak power modules. A set of device modelling parameters (both for IGBTs and diodes) have first been extracted and verified with static and dynamic comparison of experimental data from 4.5kV and 2.0kA Si based IGBT power modules. An overall fair comparison is achieved with varying set of bus voltages and load currents and at different temperatures.
| Originele taal-2 | Engels |
|---|---|
| Titel | IEEE Eenergy Conversion Congress & Exposition (ECCE) 14 - 18 September 2014, Pittsburgh, Philadelphia |
| Plaats van productie | Piscataway |
| Uitgeverij | Institute of Electrical and Electronics Engineers |
| Pagina's | 2873-2879 |
| ISBN van geprinte versie | 978-1-4799-5776-7 |
| DOI's | |
| Status | Gepubliceerd - 2014 |
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