Plasma etching is an important process in the semiconductor manufacturing process. In order to precisely control the ion energy for better process quality, a tailored pulse-shape voltage waveform is applied to the plasma reactor table. Traditionally, a linear amplifier is used to generate this waveform, which results in poor efficiency. This paper proposes a switched-mode power amplifier as a substitute to the traditional linear amplifier. The electric equivalent circuit of the plasma reactor is introduced and a basic topology for the switched-mode power amplifier is derived. The basic topology is able to generate the required waveform but it has a low efficiency of charging the capacitive load in practice. Therefore, an efficiencyimproved topology is proposed by adopting resonant charging. A prototype is built in order to validate the research. The experiments show that the presented solution yields a significantly reduced input power compared to the normally used linear amplifier in this application.
|Titel||2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)|
|Uitgeverij||Institute of Electrical and Electronics Engineers|
|Status||Geaccepteerd/In druk - 2020|
|Evenement||2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) - https://epe-ecce-conferences.com/epe2020/, Lyon, Frankrijk|
Duur: 7 sep 2020 → 11 sep 2020
|Congres||2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)|
|Verkorte titel||EPE'20 ECCE Europe|
|Periode||7/09/20 → 11/09/20|
Yu, Q., Lemmen, E., Wijnands, C. G. E. K., & Vermulst, B. J. D. (Geaccepteerd/In druk). A Switched-Mode Power Amplifier for Ion Energy Control In Plasma Etching. In 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) Institute of Electrical and Electronics Engineers.