a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

J.J.H. Gielis; P.J. Oever, van den; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.2740474

a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

J.J.H. Gielis
, P.J. Oever, van den
, M.C.M. Sanden, van de
, W.M.M. Kessels

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. ©2007 American Institute of Physics

Originele taal-2	Engels
Artikelnummer	202108
Pagina's (van-tot)	202108-1/3
Aantal pagina's	3
Tijdschrift	Applied Physics Letters
Volume	90
Nummer van het tijdschrift	20
DOI's	https://doi.org/10.1063/1.2740474
Status	Gepubliceerd - 2007

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title = "a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes",

abstract = "The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. {\textcopyright}2007 American Institute of Physics",

author = "J.J.H. Gielis and \{Oever, van den\}, P.J. and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

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AU - Gielis, J.J.H.

AU - Oever, van den, P.J.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2007

Y1 - 2007

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AB - The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. ©2007 American Institute of Physics

U2 - 10.1063/1.2740474

DO - 10.1063/1.2740474

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

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