A novel broadband electro-absorption modulator based on bandfilling in n-InGaAs: design and simulations

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Samenvatting

We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously integrated on silicon. The device is based on the electron-concentration-dependent absorption of highly doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gb/s, and a power consumption of 53 fJ/b. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

Originele taal-2Engels
Artikelnummer3300108
Aantal pagina's8
TijdschriftIEEE Journal of Selected Topics in Quantum Electronics
Volume24
Nummer van het tijdschrift1
Vroegere onlinedatum23 okt. 2017
DOI's
StatusGepubliceerd - 2018

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