Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large-area light sensing applications. Here, high-resolution slot-die-coated large-area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with a molybdenum oxide top-electrode. Together, these effectively reduce dark current densities to very low levels of ≈10−7 mA cm−2 at −2 V. The OPDs show linear behavior in a wide range of light intensities and high detectivity values under reverse bias conditions. When coated on a 508 ppi TFT backplane, a high-quality optical fingerprint scanner capable of imaging in reflection is realized. The optical and electrical properties of the fingerprint sensor are characterized and high-resolution fingerprint images are obtained.